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參數(shù)資料
| 型號(hào)： | MC14106BDTR2G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 0K |
| 描述： | IC SCHMITT TRIGGER HEX 14-TSSOP |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 系列： | 4000B |
| 邏輯類型： | 逆變器，緩沖器 |
| 電路數(shù)： | 6 |
| 輸入數(shù)： | 1 |
| 特點(diǎn)： | 施密特觸發(fā)器 |
| 電源電壓： | 3 V ~ 18 V |
| 電流 - 靜態(tài)（最大值）： | 1µA |
| 輸出電流高，低： | 8.8mA，8.8mA |
| 邏輯電平 - 低： | 0.9 V ~ 4 V |
| 邏輯電平 - 高： | 3.6 V ~ 10.8 V |
| 額定電壓和最大 CL 時(shí)的最大傳播延遲： | 80ns @ 15V，50pF |
| 工作溫度： | -55°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 供應(yīng)商設(shè)備封裝： | 14-TSSOP |
| 封裝/外殼： | 14-TSSOP（0.173"，4.40mm 寬） |
| 包裝： | 標(biāo)準(zhǔn)包裝 |
| 其它名稱： | MC14106BDTR2GOSDKR |
Semiconductor Components Industries, LLC, 2012
October, 2012 Rev. 9
1
Publication Order Number:
MC14106B/D
MC14106B
Hex Schmitt Trigger
The MC14106B hex Schmitt Trigger is constructed with MOS
Pchannel and Nchannel enhancement mode devices in a single
monolithic structure. These devices find primary use where low power
dissipation and/or high noise immunity is desired. The MC14106B
may be used in place of the MC14069UB hex inverter for enhanced
noise immunity or to “square up” slowly changing waveforms.
This device contains protection circuitry to guard against damage
due to high static voltages or electric fields. However, precautions
must be taken to avoid applications of any voltage higher than
maximum rated voltages to this highimpedance circuit. For proper
operation, Vin and Vout should be constrained to the range VSS v (Vin
or Vout) v VDD.
Unused inputs must always be tied to an appropriate logic voltage
level (e.g., either VSS or VDD). Unused outputs must be left open.
Features
Increased Hysteresis Voltage Over the MC14584B
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Capable of Driving Two Lowpower TTL Loads or One Lowpower
Schottky TTL Load Over the Rated Temperature Range
PinforPin Replacement for CD40106B and MM74C14
Can Be Used to Replace the MC14584B or MC14069UB
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ100
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (Voltages Referenced to VSS)
Symbol
Parameter
Value
Unit
VDD
DC Supply Voltage Range
0.5 to +18.0
V
Vin, Vout
Input or Output Voltage Range
(DC or Transient)
0.5 to VDD + 0.5
V
Iin, Iout
Input or Output Current
(DC or Transient) per Pin
±10
mA
PD
Power Dissipation, per Package
(Note 1)
500
mW
TA
Ambient Temperature Range
55 to +125
°C
Tstg
Storage Temperature Range
65 to +150
°C
TL
Lead Temperature
(8Second Soldering)
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Temperature Derating: Plastic “P and D/DW” Packages: – 7.0 mW/°C From
65°C To 125°C
http://onsemi.com
MARKING
DIAGRAMS
1
14
PDIP14
P SUFFIX
CASE 646
MC14106BCP
AWLYYWWG
SOIC14
D SUFFIX
CASE 751A
TSSOP14
DT SUFFIX
CASE 948G
1
14
14106BG
AWLYWW
A
= Assembly Location
WL, L
= Wafer Lot
YY, Y
= Year
WW, W = Work Week
G or G = PbFree Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
14
106B
ALYWG
G
1
14
(Note: Microdot may be in either location)
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