參數(shù)資料
型號: MC10EP446FAG
廠商: ON SEMICONDUCTOR
元件分類: 通用總線功能
英文描述: 3.3 V/5 V 8-Bit CMOS/ECL/TTL Data Input Parallel/Serial Converter
中文描述: 10E SERIES, 8-BIT RIGHT PARALLEL IN SERIAL OUT SHIFT REGISTER, COMPLEMENTARY OUTPUT, PQFP32
封裝: LEAD FREE, PLASTIC, LQFP-32
文件頁數(shù): 9/20頁
文件大?。?/td> 278K
代理商: MC10EP446FAG
MC10EP446, MC100EP446
http://onsemi.com
9
Table 11. 100EP DC CHARACTERISTICS, PECL
V
CC
= 5.0 V, V
EE
= 0 V (Note 14)
Symbol
Characteristic
40
°
C
25
°
C
85
°
C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
I
EE
Power Supply Current
90
110
130
90
110
130
95
115
135
mA
V
OH
Output HIGH Voltage (Note 15)
3855
3980
4105
3855
3980
4105
3855
3980
4105
mV
V
OL
Output LOW Voltage (Note 15)
3055
3180
3305
3055
3180
3305
3055
3180
3305
mV
V
IH
Input HIGH Voltage (Single
Ended)
CMOS
PECL
TTL
3500
3775
2000
5000
5000
5000
3500
3775
2000
5000
5000
5000
3500
3775
2000
5000
5000
5000
mV
V
IL
Input LOW Voltage (Single
Ended)
CMOS
PECL
TTL
0
3055
0
1500
3375
800
0
3055
0
1500
3375
800
0
3055
0
1500
3375
800
mV
V
BB
Output Voltage Reference
3475
3575
3675
3475
3575
3675
3475
3575
3675
mV
V
IHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 16)
2.0
5.0
2.0
5.0
2.0
5.0
V
I
IH
Input HIGH Current
150
150
150
A
I
IL
Input LOW Current
0.5
0.5
0.5
A
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
14.Input and output parameters vary 1:1 with V
CC
. V
EE
can vary +2.0 V to
0.5 V.
15.All loading with 50 to V
CC
2.0 V.
16.V
IHCMR
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
Table 12. 100EP DC CHARACTERISTICS, NECL
V
CC
= 0 V, V
EE
=
5.5 V to
3.0 V (Note 17)
Symbol
Characteristic
40
°
C
25
°
C
85
°
C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
I
EE
Power Supply Current
90
110
130
90
110
130
95
115
135
mA
V
OH
Output HIGH Voltage (Note 18)
1145
1020
895
1145
1020
895
1145
1020
895
mV
V
OL
Output LOW Voltage (Note 18)
1945
1820
1695
1945
1820
1695
1945
1820
1695
mV
V
IH
Input HIGH Voltage (Single
Ended)
1225
880
1225
880
1225
880
mV
V
IL
Input LOW Voltage (Single
Ended)
1945
1625
1945
1625
1945
1625
mV
V
BB
Output Voltage Reference
1525
1425
1325
1525
1425
1325
1525
1425
1325
mV
V
IHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 19)
V
EE
+2.0
0.0
V
EE
+2.0
0.0
V
EE
+2.0
0.0
V
I
IH
Input HIGH Current
150
150
150
A
I
IL
Input LOW Current
0.5
0.5
0.5
A
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
17.Input and output parameters vary 1:1 with V
CC
.
18.All loading with 50 to V
CC
2.0 V.
19.V
IHCMR
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
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