參數(shù)資料
型號： MC100EPT25DG
廠商： ON SEMICONDUCTOR
元件分類： 電平轉(zhuǎn)換
英文描述： −3.3V / −5V Differential ECL to +3.3V LVTTL Translator
中文描述： ECL TO TTL TRANSLATOR, TRUE OUTPUT, PDSO8
封裝： LEAD FREE, SOIC-8
文件頁數(shù)： 3/8頁
文件大?。?/td> 130K
代理商： MC100EPT25DG
MC100EPT25
http://onsemi.com
3
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
V
CC
Positive Power Supply
GND = 0 V
V
EE
=
5.0 V
3.8
V
V
EE
Negative Power Supply
GND = 0 V
V
CC
= +3.3 V
6
V
V
IN
Input Voltage
GND = 0 V
0 to V
EE
±
0.5
V
I
BB
V
BB
Sink/Source
mA
T
A
Operating Temperature Range
40 to +85
°
C
T
stg
Storage Temperature Range
65 to +150
°
C
JA
Thermal Resistance (Junction
to
Ambient)
0 lfpm
500 lfpm
8 SOIC
8 SOIC
190
130
°
C/W
°
C/W
JC
Thermal Resistance (Junction
to
Case)
Standard Board
8 SOIC
41 to 44
°
C/W
JA
Thermal Resistance (Junction
to
Ambient)
0 lfpm
500 lfpm
8 TSSOP
8 TSSOP
185
140
°
C/W
°
C/W
JC
Thermal Resistance (Junction
to
Case)
Standard Board
8 TSSOP
41 to 44
°
C/W
JA
Thermal Resistance (Junction
to
Ambient)
0 lfpm
500 lfpm
DFN8
DFN8
129
84
°
C/W
°
C/W
T
sol
Wave Solder
Pb
Pb
Free
<2 to 3 sec @ 248
°
C
<2 to 3 sec @ 260
°
C
265
265
°
C
JC
Thermal Resistance (Junction
to
Case)
(Note 2)
DFN8
35 to 40
°
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board
2S2P (2 signal, 2 power)
Table 4. NECL DC CHARACTERISTICS
V
CC
= 3.3 V; V
EE
=
5.5 V to
3.0 V; GND = 0.0 V
(Note 3)
Symbol
Characteristic
40
°
C
25
°
C
85
°
C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
8.0
16
25
8.0
16
25
8.0
16
25
mA
V
IH
Input HIGH Voltage Single
Ended
1225
880
1225
880
1225
880
mV
V
IL
Input LOW Voltage Single
Ended
1945
1625
1945
1625
1945
1625
mV
V
BB
Output Voltage Reference
1525
1425
1325
1525
1425
1325
1525
1425
1325
mV
V
IHCMR
Input HIGH Voltage Common Mode
Range (Note 4)
V
EE
+ 2.0
0.0
V
EE
+ 2.0
0.0
V
EE
+ 2.0
0.0
V
I
IH
Input HIGH Current
150
150
150
A
I
IL
Input LOW Current
0.5
0.5
0.5
A
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Input parameters vary 1:1 with GND.
4. V
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC100EPT25DG 制造商:ON Semiconductor 功能描述:TRANSLATOR / LOGIC LEVEL CONVERTER IC
MC100EPT25DR2 功能描述:轉(zhuǎn)換 - 電壓電平 Diff LVECL/ECL RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8
MC100EPT25DR2G 功能描述:轉(zhuǎn)換 - 電壓電平 Diff LVECL/ECL to LVTTL RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8
MC100EPT25DT 功能描述:轉(zhuǎn)換 - 電壓電平 Diff LVECL/ECL RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8
MC100EPT25DTG 功能描述:轉(zhuǎn)換 - 電壓電平 Diff LVECL/ECL to LVTTL RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8
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