參數(shù)資料
型號： MC100EPT24MNR4G
廠商： ON SEMICONDUCTOR
元件分類： 電平轉(zhuǎn)換
英文描述： 3.3V LVTTL/LVCMOS to Differential LVECL Translator
中文描述： LVTTL/LVCMOS TO LVECL TRANSLATOR, COMPLEMENTARY OUTPUT, DSO8
封裝： LEAD FREE, DFN-8
文件頁數(shù)： 3/8頁
文件大小： 135K
代理商： MC100EPT24MNR4G
MC100EPT24
http://onsemi.com
3
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
V
CC
Positive Power Supply
GND = 0 V
V
EE
=
3.3V
3.8
V
V
EE
Negative Power Supply
GND = 0 V
V
CC
= 3.3V
3.8
V
V
IN
Input Voltage
GND = 0 V
V
I
V
CC
0 to V
CC
V
I
out
Output Current
Continuous
Surge
50
100
mA
mA
T
A
Operating Temperature Range
40 to +85
°
C
T
stg
Storage Temperature Range
65 to +150
°
C
JA
Thermal Resistance (Junction
to
Ambient)
0 lfpm
500 lfpm
SOIC
8
SOIC
8
190
130
°
C/W
°
C/W
JC
Thermal Resistance (Junction
to
Case)
Standard Board
SOIC
8
41 to 44
°
C/W
JA
Thermal Resistance (Junction
to
Ambient)
0 lfpm
500 lfpm
TSSOP
8
TSSOP
8
185
140
°
C/W
°
C/W
JC
Thermal Resistance (Junction
to
Case)
Standard Board
TSSOP
8
41 to 44
°
C/W
JA
Thermal Resistance (Junction
to
Ambient)
0 lfpm
500 lfpm
DFN8
DFN8
129
84
°
C/W
°
C/W
T
sol
Wave Solder
Pb
Pb
Free
265
265
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 4. LVTTL INPUT DC CHARACTERISTICS
V
CC
= 3.3 V, V
EE
=
3.6 V to
3.0 V, GND = 0.0 V; T
A
=
40
°
C to 85
°
C
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
I
IH
I
IHH
I
IL
V
IK
V
IH
V
IL
Input HIGH Current
V
IN
= 2.7 V
V
CC
= V
IN
= 3.8 V
V
IN
= 0.5 V
I
IN
=
18 mA
20
A
Input HIGH Current HIGH Voltage
100
A
Input LOW Current
0.6
mA
Input Clamp Voltage
1.0
V
Input HIGH Voltage
2.0
V
Input LOW Voltage
0.8
V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 5. NECL OUTPUT DC CHARACTERISTICS
V
CC
= 3.3 V, V
EE
=
3.3 V, GND = 0.0 V (Note 2)
Symbol
Characteristic
40
°
C
25
°
C
85
°
C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
V
OH
V
OL
I
CC
I
EE
Output HIGH Voltage (Note 3)
-1145
1020
-895
-1145
1020
-895
-1145
1030
-895
mV
Output LOW Voltage (Note 3)
-1945
1820
-1695
-1945
1820
-1695
-1945
1820
-1695
mV
Positive Power Supply Current
2.0
4.0
2.0
4.0
2.0
4.0
mA
Negative Power Supply Current
20
30
38
20
30
38
20
30
38
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Output levels will vary 1:1 with GND. V
EE
can vary
±
0.3 V.
3. Outputs are terminated through a 50 resistor to GND
2 V.
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