Table 9. 10EP DC CHARACTERISTICS, NECL VCC
參數(shù)資料
型號(hào)： MC100EP446FAR2G
廠商： ON Semiconductor
文件頁(yè)數(shù)： 19/20頁(yè)
文件大?。?/td> 0K
描述： IC CONV 8BIT SER/PAR ECL 32LQFP
標(biāo)準(zhǔn)包裝： 2,000
應(yīng)用： 數(shù)據(jù)管理
接口： 差分
電源電壓： 3 V ~ 5.5 V
封裝/外殼： 32-LQFP
供應(yīng)商設(shè)備封裝： 32-LQFP（7x7）
包裝： 帶卷 (TR)
安裝類型： 表面貼裝
其它名稱： MC100EP446FAR2GOS
MC10EP446, MC100EP446
http://onsemi.com
8
Table 9. 10EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = 5.5 V to 3.0 V (Note 8)
Symbol
Characteristic
40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
90
110
140
90
110
140
95
115
145
mA
VOH
Output HIGH Voltage (Note 9)
1135 1010
885
1070
945
820
1010
885
760
mV
VOL
Output LOW Voltage (Note 9)
1935 1810 1685 1870 1745 1620 1810 1685 1560
mV
VIH
Input HIGH Voltage (SingleEnded)
1210
885
1145
820
1085
760
mV
VIL
Input LOW Voltage (SingleEnded)
1935
1610 1870
1545 1810
1485
mV
VBB
Output Voltage Reference
1510 1460 1310 1445 1395 1245 1385 1335 1185
mV
VIHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 10)
VEE+2.0
0.0
VEE+2.0
0.0
VEE+2.0
0.0
V
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
(All Except SYNC, SYNC)
SYNC, SYNC
0.5
150
0.5
150
0.5
150
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
8. Input and output parameters vary 1:1 with VCC.
9. All loading with 50 W to VCC 2.0 V.
10.VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
Table 10. 100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 11)
Symbol
Characteristic
40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
90
110
130
90
110
130
95
115
135
mA
VOH
Output HIGH Voltage (Note 12)
2155
2280
2405
2155
2280
2405
2155
2280
2405
mV
VOL
Output LOW Voltage (Note 12)
1355
1480
1605
1355
1480
1605
1355
1480
1605
mV
VIH
Input HIGH Voltage (SingleEnded)
CMOS
PECL
TTL
2000
2075
2000
3300
2000
2075
2000
3300
2000
2075
2000
3300
mV
VIL
Input LOW Voltage (SingleEnded)
CMOS
PECL
TTL
0
1355
0
800
1675
800
0
1355
0
800
1675
800
0
1355
0
800
1675
800
mV
VBB
Output Voltage Reference
1775
1875
1975
1775
1875
1975
1775
1875
1975
mV
VIHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 13)
2.0
3.3
2.0
3.3
2.0
3.3
V
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
11. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to 2.2 V.
12.All loading with 50 W to VCC 2.0 V.
13.VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
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