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參數(shù)資料
| 型號(hào)： | MC100EP16VBDR2G |
| 廠商： | ON Semiconductor |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC RCVR/DRVR 5V DIFF ECL 8-SOIC |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 系列： | 100EP |
| 邏輯類型： | 差分接收器/驅(qū)動(dòng)器 |
| 電源電壓： | 3 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOICN |
| 包裝： | 帶卷 (TR) |
MC100EP16VB
http://onsemi.com
5
Table 7. AC CHARACTERISTICS VCC = 0 V; VEE = 3.0 V to 5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 12)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
fmax
Maximum Frequency (Figure 2)
> 3
GHz
tPLH,
tPHL
Propagation Delay
(Differential) Q
(Differential) QHG, QHG
(SingleEnded) Q
(SingleEnded) QHG, QHG
200
250
275
280
325
330
350
400
250
300
350
400
450
275
325
310
320
360
370
425
475
ps
tSKEW
Duty Cycle Skew (Note 13)
5.0
20
5.0
20
5.0
20
ps
tJITTER
CycletoCycle Jitter (Figure 3)
0.2
< 1
0.2
< 1
0.2
< 1
ps
VPP
Input Voltage Swing
(Differential) HG
(Differential) Q
25
150
800
1200
25
150
800
1200
25
150
800
1200
mV
tr
tf
Output Rise/Fall Times
Q
(20% 80%)
QHG, QHG
200
70
270
130
400
220
80
300
150
420
240
250
100
310
170
450
270
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
12.Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to VCC 2.0 V.
13.Skew is measured between outputs under identical transitions. Duty cycle skew is defined only for differential operation when the delays
are measured from the cross point of the inputs to the cross point of the outputs.
0
100
200
300
400
500
600
700
800
900
0
500
1000
1500
2000
2500
3000
3500
4000
Figure 2. Fmax/Jitter for QHG, QHG Output
FREQUENCY (MHz)
1
2
3
4
5
6
7
8
V
OUTpp
(mV)
JITTER
OUT
ps
(RMS)
9
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| MC100EP16VBDT | 功能描述:總線收發(fā)器 3.3V/5V ECL with RoHS:否 制造商:Fairchild Semiconductor 邏輯類型:CMOS 邏輯系列:74VCX 每芯片的通道數(shù)量:16 輸入電平:CMOS 輸出電平:CMOS 輸出類型:3-State 高電平輸出電流:- 24 mA 低電平輸出電流:24 mA 傳播延遲時(shí)間:6.2 ns 電源電壓-最大:2.7 V, 3.6 V 電源電壓-最小:1.65 V, 2.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TSSOP-48 封裝:Reel |
| MC100EP16VBDTG | 功能描述:總線收發(fā)器 3.3V/5V ECL with High and Low Gain RoHS:否 制造商:Fairchild Semiconductor 邏輯類型:CMOS 邏輯系列:74VCX 每芯片的通道數(shù)量:16 輸入電平:CMOS 輸出電平:CMOS 輸出類型:3-State 高電平輸出電流:- 24 mA 低電平輸出電流:24 mA 傳播延遲時(shí)間:6.2 ns 電源電壓-最大:2.7 V, 3.6 V 電源電壓-最小:1.65 V, 2.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TSSOP-48 封裝:Reel |
| MC100EP16VBDTR2 | 功能描述:總線收發(fā)器 3.3V/5V ECL with RoHS:否 制造商:Fairchild Semiconductor 邏輯類型:CMOS 邏輯系列:74VCX 每芯片的通道數(shù)量:16 輸入電平:CMOS 輸出電平:CMOS 輸出類型:3-State 高電平輸出電流:- 24 mA 低電平輸出電流:24 mA 傳播延遲時(shí)間:6.2 ns 電源電壓-最大:2.7 V, 3.6 V 電源電壓-最小:1.65 V, 2.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TSSOP-48 封裝:Reel |
| MC100EP16VBDTR2G | 功能描述:總線收發(fā)器 3.3V/5V ECL with High and Low Gain RoHS:否 制造商:Fairchild Semiconductor 邏輯類型:CMOS 邏輯系列:74VCX 每芯片的通道數(shù)量:16 輸入電平:CMOS 輸出電平:CMOS 輸出類型:3-State 高電平輸出電流:- 24 mA 低電平輸出電流:24 mA 傳播延遲時(shí)間:6.2 ns 電源電壓-最大:2.7 V, 3.6 V 電源電壓-最小:1.65 V, 2.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TSSOP-48 封裝:Reel |
| MC100EP16VBMNR4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:3.3V / 5V ECL Differential Receiver/Driver with High and Low Gain |
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