參數(shù)資料
型號: MC100E104FNG
廠商: ON SEMICONDUCTOR
元件分類: 通用總線功能
英文描述: 5V ECL Quint 2-Input AND/NAND Gate
中文描述: 100E SERIES, 5 2-INPUT AND/NAND GATE, PQCC28
封裝: LEAD FREE, PLASTIC, LCC-28
文件頁數(shù): 4/7頁
文件大小: 85K
代理商: MC100E104FNG
MC10E104, MC100E104
http://onsemi.com
4
Table 6. 100E SERIES PECL DC CHARACTERISTICS
V
CCx
= 5.0 V; V
EE
= 0.0 V (Note 5)
Symbol
Characteristic
40
°
C
25
°
C
85
°
C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
I
EE
V
OH
V
OL
V
IH
V
IL
I
IH
I
IL
Power Supply Current
38
46
38
46
44
53
mA
Output HIGH Voltage (Note 6)
3975
4050
4120
3975
4050
4120
3975
4050
4120
mV
Output LOW Voltage (Note 6)
3190
3295
3380
3190
3255
3380
3190
3260
3380
mV
Input HIGH Voltage
3835
3975
4120
3835
3975
4120
3835
3975
4120
mV
Input LOW Voltage
3190
3355
3525
3190
3525
3355
3190
3355
3525
mV
Input HIGH Current
200
200
200
A
Input LOW Current
0.5
0.3
0.5
0.25
0.5
0.2
A
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
5. Input and output parameters vary 1:1 with V
CC
. V
EE
can vary 0.46 V / +0.8 V.
6. Outputs are terminated through a 50 resistor to V
CC
2.0 V.
Table 7. 100E SERIES NECL DC CHARACTERISTICS
V
CCx
= 0 V; V
EE
= 5.0 V (Note 7)
Symbol
Characteristic
40
°
C
25
°
C
85
°
C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
I
EE
V
OH
V
OL
V
IH
V
IL
I
IH
I
IL
Power Supply Current
38
46
38
46
44
53
mA
Output HIGH Voltage (Note 8)
1025
950
880
1025
950
880
1025
950
880
mV
Output LOW Voltage (Note 8)
1810
1705
1620
1810
1745
1620
1810
1740
1620
mV
Input HIGH Voltage
1165
1025
880
1165
1025
880
1165
1025
880
mV
Input LOW Voltage
1810
1645
1475
1810
1645
1475
1810
1645
1475
mV
Input HIGH Current
200
200
200
A
Input LOW Current
0.5
0.3
0.5
0.25
0.5
0.2
A
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
7. Input and output parameters vary 1:1 with V
CC
. V
EE
can vary 0.46 V / +0.8 V.
8. Outputs are terminated through a 50 resistor to V
CC
2.0 V.
Table 8. AC CHARACTERISTICS
V
CCx
= 5.0 V; V
EE
= 0.0 V
or V
CCx
= 0.0 V; V
EE
= 5.0 V (Note 9)
Symbol
f
MAX
t
PLH
t
PHL
Characteristic
40
°
C
25
°
C
85
°
C
Unit
MHz
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Maximum Toggle Frequency
700
700
700
Propagation Delay to Output
D to Q
D to F
225
500
385
725
600
1000
225
500
385
725
600
1000
225
500
385
725
600
1000
ps
t
SKEW
Within-Device Skew (Note 10)
D to Q
75
75
75
ps
t
JITTER
t
r
t
f
Random Clock Jitter (RMS)
< 1
< 1
< 1
ps
Rise/Fall Time
(20 - 80%)
Q
F
100
300
425
475
700
700
100
300
425
475
700
700
100
300
425
475
700
700
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
9. 10 Series: V
EE
can vary 0.46 V / +0.06 V.
100 Series: V
EE
can vary 0.46 V / +0.8 V.
10.Within-device skew is defined as identical transitions on similar paths through a device.
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