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參數(shù)資料
| 型號(hào)： | MC-4R64FKE8S-840 |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | Direct Rambus DRAM SO-RIMM Module |
| 中文描述： | 32M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA160 |
| 封裝： | SORIMM-160 |
| 文件頁(yè)數(shù)： | 13/14頁(yè) |
| 文件大?。?/td> | 151K |
| 代理商： | MC-4R64FKE8S-840 |
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Data Sheet E0259N21 (Ver. 2.1)
8
MC-4R64FKE8S-840
Electrical Specification
Absolute Maximum Ratings
Symbol
Parameter
MIN.
MAX.
Unit
VI,ABS
Voltage applied to any RSL or CMOS signal pad with respect to GND
0.3
VDD + 0.3
V
VDD,ABS
Voltage on VDD with respect to GND
0.5
VDD + 1.0
V
TSTORE
Storage temperature
50
+100
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Recommended Electrical Conditions
Symbol
Parameter and conditions
MIN.
MAX.
Unit
VDD
Supply voltage
2.50
0.13
2.50 + 0.13
V
VCMOS
CMOS I/O power supply at pad
2.5V controllers
VDD
V
1.8V controllers
1.8
0.1
1.8 + 0.2
VREF
Reference voltage
1.4
0.2
1.4 + 0.2
V
VSPD
Serial presence detector-positive power supply
2.2
3.6
V
VIL
RSL input low voltage
VREF
0.5
VREF
0.2
V
VIH
RSL input high voltage
VREF + 0.2
VREF + 0.5
V
VIL,CMOS
CMOS input low voltage
0.3
0.5VCMOS
0.25
V
VIH,CMOS
CMOS input high voltage
0.5VCMOS+0.25
VCMOS + 0.3
V
VOL,CMOS
CMOS output low voltage, IOL,CMOS = 1 mA
—
0.3
V
VOH,CMOS
CMOS output high voltage, IOH,CMOS =
0.25 mA
VCMOS
0.3
—
V
IREF
VREF current, VREF,MAX
20.0
+20.0
A
ISCK,CMD
CMOS input leakage current, (0
≤ VCMOS ≤ VDD)
20.0
+20.0
A
ISIN,SOUT
CMOS input leakage current, (0
≤ VCMOS ≤ VDD)
10.0
+10.0
A
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