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參數(shù)資料
| 型號(hào)： | MC-4R64FKE8D-845 |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | EVALUATION BOARD FOR MPC |
| 中文描述： | 32M X 18 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 |
| 封裝： | SOCKET TYPE, RIMM-184 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 162K |
| 代理商： | MC-4R64FKE8D-845 |
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Data Sheet E0080N21 (Ver 2.1)
6
MC-4R64FKE8D
(2/2)
Signal
I/O
Type
Description
RSCK
I
VCMOS
Serial clock input. Clock source used to read from and write to the RDRAM
control registers.
SA0
I
SVDD
Serial Presence Detect Address 0.
SA1
I
SVDD
Serial Presence Detect Address 1.
SA2
I
SVDD
Serial Presence Detect Address 2.
SCL
I
SVDD
Serial Presence Detect Clock.
SDA
I/O
SVDD
Serial Presence Detect Data (Open Collector I/O).
SIN
I/O
VCMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO0
of the first RDRAM on the module.
SOUT
I/O
VCMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO1
of the last RDRAM on the module.
SVDD
—
SPD Voltage. Used for signals SCL, SDA, SWP, SA0, SA1 and SA2.
SWP
I
SVDD
Serial Presence Detect Write Protect (active high). When low, the SPD can be
written as well as read.
VCMOS
—
CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.
VDD
—
Supply voltage for the RDRAM core and interface logic.
VREF
—
Logic threshold reference voltage for RSL signals.
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