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參數(shù)資料
| 型號： | MC-4R512FKK8K |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 512MB 32-bit Direct Rambus DRAM RIMM Module |
| 中文描述： | 512MB的32位直接Rambus的內(nèi)存RIMM的模塊 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 91K |
| 代理商： | MC-4R512FKK8K |
MC-4R512FKK8K
Preliminary Data Sheet E0254N10 (Ver. 1.0)
8
Electrical Specifications
Absolute Maximum Ratings
Symbol
Parameter
MIN.
MAX.
Unit
VI,ABS
Voltage applied to any RSL or CMOS signal pad with
0.3
VDD + 0.3
V
VDD,ABS
Voltage on VDD with respect to GND
0.5
VDD + 1.0
V
TSTORE
Storage temperature
50
+100
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage.
The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Recommended Electrical Conditions
Symbol
Parameter and conditions
MIN.
MAX.
Unit
VDD
Supply voltage
Note
2.50
0.13
2.50 + 0.13
V
VCMOS
CMOS I/O power supply at pad
2.5V controllers
VDD
V
1.8V controllers
1.8
0.1
1.8 + 0.2
VREF
Reference voltage
Note
1.4
0.2
1.4 + 0.2
V
SVDD
Serial Presence Detector- positive power supply
2.2
3.6
V
VTERM
Termination Voltage
1.89
0.09
1.89 + 0.09
V
Note: See Direct RDRAM datasheet for more details.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4R512FKK8K-840 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB 32-bit Direct Rambus DRAM RIMM Module |
| MC-4R64CEE6B | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6B-653 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6B-745 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6B-845 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
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