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參數(shù)資料
| 型號(hào)： | MC-4R512FKE6D-840 |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| 中文描述： | 256M X 16 DIRECT RAMBUS DRAM MODULE, DMA184 |
| 封裝： | SOCKET TYPE, RIMM-184 |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 130K |
| 代理商： | MC-4R512FKE6D-840 |
Data Sheet
E0263N10 (Ver 1.0)
10
MC-4R512FKE6D-840
RIMM Module Current Profile
I
DD
RIMM module power conditions
Note1
MAX.
Unit
I
DD1
One RDRAM in Read
Note2
, balance in NAP mode
768
mA
I
DD2
One RDRAM in Read
Note2
, balance in Standby mode
2055
mA
I
DD3
One RDRAM in Read
Note2
, balance in Active mode
2730
mA
I
DD4
One RDRAM in Write, balance in NAP mode
828
mA
I
DD5
One RDRAM in Write, balance in Standby mode
2115
mA
I
DD6
One RDRAM in Write, balance in Active mode
2790
mA
Notes 1.
Actual power will depend on individual RDRAM component specifications, memory controller and usage
patterns. Power does not include Refresh Current.
2.
I/O current is a function of the
% of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA for the
following :
V
DD
= 2.5 V, V
TERM
= 1.8 V, V
REF
= 1.4 V and V
DIL
= V
REF
0.5 V.
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| MC-4R512FKE6D | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| MC-4R512FKE6D-653 | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4R512FKE6D-845 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| MC-4R512FKE8D | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKE8D-653 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKE8D-745 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKE8D-840 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
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