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參數(shù)資料
| 型號： | MC-4R512FKE6D-745 |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| 中文描述： | 256M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 |
| 封裝： | SOCKET TYPE, RIMM-184 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 132K |
| 代理商： | MC-4R512FKE6D-745 |
Data Sheet
E0077N20 (Ver 2.0)
8
MC-4R512FKE6D
Electrical Specification
Absolute Maximum Ratings
Symbol
Parameter
MIN.
MAX.
Unit
V
I,ABS
Voltage applied to any RSL or CMOS signal pad with respect to GND
0.3
V
DD
+ 0.3
V
V
DD,ABS
Voltage on V
DD
with respect to GND
0.5
V
DD
+ 1.0
V
T
STORE
Storage temperature
50
+100
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Recommended Electrical Conditions
Symbol
Parameter and conditions
MIN.
MAX.
Unit
V
DD
Supply voltage
2.50
0.13
2.50 + 0.13
V
V
CMOS
CMOS I/O power supply at pad
2.5V controllers
2.5
0.13
2.5 + 0.25
V
1.8V controllers
1.8
0.1
1.8 + 0.2
V
REF
Reference voltage
1.4
0.2
1.4 + 0.2
V
V
IL
RSL input low voltage
V
REF
0.5
V
REF
0.2
V
V
IH
RSL input high voltage
V
REF
+ 0.2
V
REF
+ 0.5
V
V
IL,CMOS
CMOS input low voltage
0.3
0.5V
CMOS
0.25
V
V
IH,CMOS
CMOS input high voltage
0.5V
CMOS
+0.25
V
CMOS
+ 0.3
V
V
OL,CMOS
CMOS output low voltage, I
OL,CMOS
= 1 mA
—
0.3
V
V
OH,CMOS
CMOS output high voltage, I
OH,CMOS
=
0.25 mA
V
CMOS
0.3
—
V
I
REF
V
REF
current, V
REF
,
MAX
160.0
+160.0
μ
A
I
SCK,CMD
CMOS input leakage current, (0
≤
V
CMOS
≤
V
DD
)
160.0
+160.0
μ
A
I
SIN,SOUT
CMOS input leakage current, (0
≤
V
CMOS
≤
V
DD
)
10.0
+10.0
μ
A
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| MC-4R512FKE6D-845 | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| MC-4R512FKE8D-840 | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKE8D | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKE8D-653 | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKE8D-745 | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4R512FKE6D-840 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| MC-4R512FKE6D-845 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| MC-4R512FKE8D | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKE8D-653 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKE8D-745 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
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