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參數(shù)資料
| 型號： | MC-4R256FKE8S-845 |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) |
| 中文描述： | 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160 |
| 封裝： | SORIMM-160 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 126K |
| 代理商： | MC-4R256FKE8S-845 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
MOS INTEGRATED CIRCUIT
MC-4R256FKE8S
Direct Rambus DRAM SO-RIMM
TM
Module
256M-BYTE (128M-WORD x 18-BIT)
DATA
SHEET
Document No. E0138N30 (Ver. 3.0)
Date Published June 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
Elpida Memory,Inc. 2001-2002
Description
The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable
for use in a broad range of applications including computer memory, mobile personal computers, networking
systems, and other applications where high bandwidth and low latency are required.
MC-4R256FKE8S modules consists of eight 288M Direct Rambus DRAM (Direct RDRAM) devices (
μ
PD488588).
These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling
Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design
technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per 16 bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield high bus efficiency. The Direct RDRAM's multi-bank architecture supports up to four simultaneous
transactions per device.
Features
160 edge connector pads with 0.65mm pad spacing
256 MB Direct RDRAM storage
Each RDRAM
has 32 banks, for 256 banks total on module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 V supply
Powerdown self refresh modes
Separate Row and Column buses for higher efficiency
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| MC-4R256FKK6K | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB 32-bit Direct Rambus DRAM RIMM Module |
| MC-4R256FKK6K-840 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB 32-bit Direct Rambus DRAM RIMM Module |
| MC-4R256FKK8K | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB 32-bit Direct Rambus DRAM RIMM Module |
| MC-4R256FKK8K-840 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB 32-bit Direct Rambus DRAM RIMM Module |
| MC-4R512FKE6D | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
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