參數(shù)資料
型號: MC-4R256FKE8D-745
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
中文描述: 128M X 18 DIRECT RAMBUS DRAM MODULE, 1.56 ns, DMA184
封裝: RIMM-184
文件頁數(shù): 6/14頁
文件大?。?/td> 116K
代理商: MC-4R256FKE8D-745
Data Sheet
E0079N20 (Ver 2.0)
6
MC-4R256FKE8D
(2/2)
Signal
I/O
Type
Description
RSCK
I
V
CMOS
Serial clock input. Clock source used to read from and write to the RDRAM
control registers.
SA0
I
SV
DD
Serial Presence Detect Address 0.
SA1
I
SV
DD
Serial Presence Detect Address 1.
SA2
I
SV
DD
Serial Presence Detect Address 2.
SCL
I
SV
DD
Serial Presence Detect Clock.
SDA
I/O
SV
DD
Serial Presence Detect Data (Open Collector I/O).
SIN
I/O
V
CMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO0
of the first RDRAM on the module.
SOUT
I/O
V
CMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO1
of the last RDRAM on the module.
SV
DD
SPD Voltage. Used for signals SCL, SDA, SWP, SA0, SA1 and SA2.
SWP
I
SV
DD
Serial Presence Detect Write Protect (active high). When low, the SPD can be
written as well as read.
V
CMOS
CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.
V
DD
Supply voltage for the RDRAM core and interface logic.
V
REF
Logic threshold reference voltage for RSL signals.
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MC-4R256FKE8D-840 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
MC-4R256FKE8D-845 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
MC-4R256FKE8S 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
MC-4R256FKE8S-840 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
MC-4R256FKE8S-845 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)