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    參數(shù)資料
    型號: MC-4R256FKE6D-653
    廠商: ELPIDA MEMORY INC
    元件分類: DRAM
    英文描述: Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
    中文描述: 128M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
    封裝: RIMM-184
    文件頁數(shù): 6/14頁
    文件大?。?/td> 116K
    代理商: MC-4R256FKE6D-653
    Data Sheet
    E0094N20 (Ver. 2.0)
    6
    MC-4R256FKE6D
    (2/2)
    Signal
    I/O
    Type
    Description
    RSCK
    I
    V
    CMOS
    Serial clock input. Clock source used to read from and write to the RDRAM
    control registers.
    SA0
    I
    SV
    DD
    Serial Presence Detect Address 0.
    SA1
    I
    SV
    DD
    Serial Presence Detect Address 1.
    SA2
    I
    SV
    DD
    Serial Presence Detect Address 2.
    SCL
    I
    SV
    DD
    Serial Presence Detect Clock.
    SDA
    I/O
    SV
    DD
    Serial Presence Detect Data (Open Collector I/O).
    SIN
    I/O
    V
    CMOS
    Serial I/O for reading from and writing to the control registers. Attaches to SIO0
    of the first RDRAM on the module.
    SOUT
    I/O
    V
    CMOS
    Serial I/O for reading from and writing to the control registers. Attaches to SIO1
    of the last RDRAM on the module.
    SV
    DD
    SPD Voltage. Used for signals SCL, SDA, SWP, SA0, SA1 and SA2.
    SWP
    I
    SV
    DD
    Serial Presence Detect Write Protect (active high). When low, the SPD can be
    written as well as read.
    V
    CMOS
    CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.
    V
    DD
    Supply voltage for the RDRAM core and interface logic.
    V
    REF
    Logic threshold reference voltage for RSL signals.
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