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參數(shù)資料
| 型號： | MC-4R256CEE6C-845 |
| 廠商： | NEC Corp. |
| 英文描述： | Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT |
| 中文描述： | 直接Rambus的內(nèi)存RIMM的模塊256M - 128M的字節(jié)字x 16位 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 129K |
| 代理商： | MC-4R256CEE6C-845 |
Preliminary Data Sheet M14541EJ1V1DS00
6
MC-4R256CEE6B, 4R256CEE6C
(2/2)
Signal
I/O
Type
Description
RSCK
I
V
CMOS
Serial clock input. Clock source used to read from and write to the RDRAM
control registers.
SA0
I
SV
DD
Serial Presence Detect Address 0.
SA1
I
SV
DD
Serial Presence Detect Address 1.
SA2
I
SV
DD
Serial Presence Detect Address 2.
SCL
I
SV
DD
Serial Presence Detect Clock.
SDA
I/O
SV
DD
Serial Presence Detect Data (Open Collector I/O).
SIN
I/O
V
CMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO0
of the first RDRAM on the module.
SOUT
I/O
V
CMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO1
of the last RDRAM on the module.
SV
DD
—
—
SPD Voltage. Used for signals SCL, SDA, SWP, SA0, SA1 and SA2.
SWP
I
SV
DD
Serial Presence Detect Write Protect (active high). When low, the SPD can be
written as well as read.
V
CMOS
—
—
CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.
V
DD
—
—
Supply voltage for the RDRAM core and interface logic.
V
REF
—
—
Logic threshold reference voltage for RSL signals.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4R256CPE6C | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT |
| MC-4R256CPE6C-653 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT |
| MC-4R256CPE6C-745 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT |
| MC-4R256CPE6C-845 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT |
| MC-4R256FKE6D | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT) |
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