參數(shù)資料
型號(hào)： MC-4R256CEE6C-653
廠商： NEC Corp.
英文描述： Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
中文描述： 直接Rambus的內(nèi)存RIMM的模塊256M - 128M的字節(jié)字x 16位
文件頁(yè)數(shù)： 8/16頁(yè)
文件大小： 129K
代理商： MC-4R256CEE6C-653
Preliminary Data Sheet M14541EJ1V1DS00
8
MC-4R256CEE6B, 4R256CEE6C
Electrical Specification
Absolute Maximum Ratings
Symbol
Parameter
MIN.
MAX.
Unit
V
I,ABS
Voltage applied to any RSL or CMOS signal pad with respect to GND
0.3
V
DD
+ 0.3
V
V
DD,ABS
Voltage on V
DD
with respect to GND
0.5
V
DD
+ 1.0
V
T
STORE
Storage temperature
50
+100
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Recommended Electrical Conditions
Symbol
Parameter and conditions
MIN.
MAX.
Unit
V
DD
Supply voltage
2.50
0.13
2.50 + 0.13
V
V
CMOS
CMOS I/O power supply at pad
2.5V controllers
2.5
0.13
2.5 + 0.25
V
1.8V controllers
1.8
0.1
1.8 + 0.2
V
REF
Reference voltage
1.4
0.2
1.4 + 0.2
V
V
IL
RSL input low voltage
V
REF
0.5
V
REF
0.2
V
V
IH
RSL input high voltage
V
REF
+ 0.2
V
REF
+ 0.5
V
V
IL,CMOS
CMOS input low voltage
0.3
0.5V
CMOS
0.25
V
V
IH,CMOS
CMOS input high voltage
0.5V
CMOS
+0.25
V
CMOS
+ 0.3
V
V
OL,CMOS
CMOS output low voltage, I
OL,CMOS
= 1 mA
—
0.3
V
V
OH,CMOS
CMOS output high voltage, I
OH,CMOS
=
0.25 mA
V
CMOS
0.3
—
V
I
REF
V
REF
current, V
REF
,
MAX
160.0
+160.0
μ
A
I
SCK,CMD
CMOS input leakage current, (0
≤
V
CMOS
≤
V
DD
)
160.0
+160.0
μ
A
I
SIN,SOUT
CMOS input leakage current, (0
≤
V
CMOS
≤
V
DD
)
10.0
+10.0
μ
A
相關(guān)PDF資料
PDF描述
MC-4R256CEE6C-745 Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
MC-4R256CEE6C-845 Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
MC-4R256CPE6C Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC-4R256CEE6C-745 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
MC-4R256CEE6C-845 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
MC-4R256CPE6C 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
MC-4R256CPE6C-653 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
MC-4R256CPE6C-745 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
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