參數(shù)資料
型號: MC-4R192CPE6C
廠商: NEC Corp.
英文描述: Direct Rambus DRAM RIMM Module 192M-BYTE 96M-WORD x 16-BIT
中文描述: 直接Rambus的模塊192M內(nèi)存RIMM的技嘉9600字× 16位
文件頁數(shù): 10/16頁
文件大小: 133K
代理商: MC-4R192CPE6C
Preliminary Data Sheet M14808EJ2V0DS00
10
MC-4R192CPE6C
RIMM Module Current Profile
I
DD
RIMM module power conditions
Note1
MAX.
Unit
I
DD1
One RDRAM in Read
Note2
, balance in NAP mode
-845
736.2
mA
-745
671.2
-653
586.2
I
DD2
One RDRAM in Read
Note2
, balance in Standby mode
-845
1,900
mA
-745
1,780
-653
1,585
I
DD3
One RDRAM in Read
Note2
, balance in Active mode
-845
2,670
mA
-745
2,440
-653
2,135
I
DD4
One RDRAM in Write, balance in NAP mode
-845
696.2
mA
-745
641.2
-653
561.2
I
DD5
One RDRAM in Write, balance in Standby mode
-845
1,860
mA
-745
1,750
-653
1,560
I
DD6
One RDRAM in Write, balance in Active mode
-845
2,630
mA
-745
2,410
-653
2,110
Notes 1.
Actual power will depend on individual RDRAM component specifications, memory controller and usage
patterns. Power does not include Refresh Current.
2.
I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA for the
following : V
DD
= 2.5 V, V
TERM
= 1.8 V, V
REF
= 1.4 V and V
DIL
= V
REF
0.5 V.
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