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參數(shù)資料
| 型號(hào)： | MC-4R128FKE8D-745 |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
| 中文描述： | 64M X 18 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 |
| 封裝： | SOCKET TYPE, RIMM-184 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大小： | 113K |
| 代理商： | MC-4R128FKE8D-745 |
Data Sheet
E0078N20 (Ver 2.0)
9
MC-4R128FKE8D
AC Electrical Specifications
Symbol
Parameter and Conditions
MIN.
TYP.
MAX.
Unit
Z
Module Impedance of RSL signals
25.2
28.0
30.8
Module Impedance of SCK and CMD signals
23.8
28.0
32.2
T
PD
Average clock delay from finger to finger of all RSL clock nets
1.28
ns
(CTM, CTMN,CFM, and CFMN)
T
PD
Propagation delay variation of RSL signals with respect to TPD
Note1,2
21
+21
ps
T
PD-CMOS
Propagation delay variation of SCK signal with respect to an average clock
delay
Note1
250
+250
ps
T
PD- SCK,CMD
Propagation delay variation of CMD signal with respect to SCK signal
200
+200
ps
V
α
/V
IN
Attenuation Limit
-845
12.0
%
-745
12.0
-653
10.5
V
XF
/V
IN
Forward crosstalk coefficient
-845
2.0
%
(300ps input rise time 20% - 80%)
-745
2.0
-653
2.0
V
XB
/V
IN
Backward
crosstalk coefficient
-845
1.5
%
(300ps input rise time 20% - 80%)
-745
1.5
-653
1.5
R
DC
DC Resistance Limit
-845
0.6
-745
0.6
-653
0.6
Notes 1.
T
PD
or Average clock delay is defined as the average delay from finger to finger of all RSL clock nets (CTM,
CTMN, CFM, and CFMN).
2.
If the RIMM module meets the following specification, then it is compliant to the specification.
If the RIMM module does not meet these specifications, then the specification can be adjusted by the
“Adjusted
T
PD
Specification” table.
Adjusted
T
PD
Specification
Symbol
Parameter and conditions
Adjusted MIN./MAX.
Absolute
Unit
MIN.
MAX.
T
PD
Propagation delay variation of RSL signals with respect to T
PD
+/
[17+(18*N*
Z0)]
Note
30
+30
ps
Note
N = Number of RDRAM devices installed on the RIMM module.
Z0 = delta Z0
%
= (MAX. Z0
MIN. Z0) / (MIN. Z0)
(MAX. Z0 and MIN. Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers
on the module.)
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| MC-4R128FKE8D-845 | Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
| MC-4R128FKE8D | Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
| MC-4R128FKE8D-840 | Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
| MC-4R128FKE8S-840 | Direct Rambus DRAM SO-RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4R128FKE8D-840 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
| MC-4R128FKE8D-845 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
| MC-4R128FKE8S | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM SO-RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
| MC-4R128FKE8S-840 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM SO-RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
| MC-4R128FKE8S-845 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM SO-RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
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