參數(shù)資料
型號: MC-4R128CPE6C-845
廠商: NEC Corp.
英文描述: Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
中文描述: 直接Rambus的128M的內(nèi)存RIMM的模塊技嘉6400字× 16位
文件頁數(shù): 10/16頁
文件大?。?/td> 133K
代理商: MC-4R128CPE6C-845
Preliminary Data Sheet M14807EJ2V0DS00
10
MC-4R128CPE6C
RIMM Module Current Profile
I
DD
RIMM module power conditions
Note1
MAX.
Unit
I
DD1
One RDRAM in Read
Note2
, balance in NAP mode
-845
719.4
mA
-745
654.4
-653
569.4
I
DD2
One RDRAM in Read
Note2
, balance in Standby mode
-845
1,460
mA
-745
1,360
-653
1,205
I
DD3
One RDRAM in Read
Note2
, balance in Active mode
-845
1,950
mA
-745
1,780
-653
1,555
I
DD4
One RDRAM in Write, balance in NAP mode
-845
679.4
mA
-745
624.4
-653
544.4
I
DD5
One RDRAM in Write, balance in Standby mode
-845
1,420
mA
-745
1,330
-653
1,180
I
DD6
One RDRAM in Write, balance in Active mode
-845
1,910
mA
-745
1,750
-653
1,530
Notes 1.
Actual power will depend on individual RDRAM component specifications, memory controller and usage
patterns. Power does not include Refresh Current.
2.
I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA for the
following : V
DD
= 2.5 V, V
TERM
= 1.8 V, V
REF
= 1.4 V and V
DIL
= V
REF
0.5 V.
相關(guān)PDF資料
PDF描述
MC-4R128CPE6C Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
MC-4R128CPE6C-653 Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC-4R128FKE6D 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
MC-4R128FKE6D-653 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
MC-4R128FKE6D-745 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
MC-4R128FKE6D-840 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
MC-4R128FKE6D-845 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)