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參數(shù)資料
| 型號(hào)： | MC-4R128CEE6C-845 |
| 廠商： | NEC Corp. |
| 英文描述： | Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
| 中文描述： | 直接Rambus的128M的內(nèi)存RIMM的模塊技嘉6400字× 16位 |
| 文件頁(yè)數(shù)： | 9/16頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | MC-4R128CEE6C-845 |
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Preliminary Data Sheet M14539EJ1V1DS00
9
MC-4R128CEE6B, 4R128CEE6C
AC Electrical Specifications
Symbol
Parameter and Conditions
MIN.
TYP.
MAX.
Unit
Z
Module Impedance
25.2
28
30.8
T
PD
Average clock delay from finger to finger of all RSL clock nets
-845
1.50
ns
(CTM, CTMN,CFM, and CFMN)
-745
1.50
-653
1.60
T
PD
Propagation delay variation of RSL signals with respect to TPD
Note1,2
21
+21
ps
T
PD-CMOS
Propagation delay variation of SCK and CMD signals with respect to
an average clock delay
Note1
100
+100
ps
V
α
/V
IN
Attenuation Limit
-845
16
%
-745
16
-653
10
V
XF
/V
IN
Forward crosstalk coefficient
-845
4
%
(300ps input rise time 20% - 80%)
-745
4
-653
4
V
XB
/V
IN
Backward crosstalk coefficient
-845
2.0
%
(300ps input rise time 20% - 80%)
-745
2.0
-653
2.0
R
DC
DC Resistance Limit
-845
0.8
-745
0.8
-653
0.8
Notes 1.
T
PD
or Average clock delay is defined as the average delay from finger to finger of all RSL clock nets (CTM,
CTMN, CFM, and CFMN).
2.
If the RIMM module meets the following specification, then it is compliant to the specification.
If the RIMM module does not meet these specifications, then the specification can be adjusted by the
“Adjusted
T
PD
Specification” table.
Adjusted
T
PD
Specification
Symbol
Parameter and conditions
Adjusted MIN./MAX.
Absolute
Unit
MIN.
MAX.
T
PD
Propagation delay variation of RSL signals with respect to T
PD
+/
[17+(18*N*
Z0)]
Note
30
+30
ps
Note
N = Number of RDRAM devices installed on the RIMM module.
Z0 = delta Z0% = (MAX. Z0
MIN. Z0) / (MIN. Z0)
(MAX. Z0 and MIN. Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers
on the module.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-4R128CEE6B-653 | Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
| MC-4R128CEE6B-745 | Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
| MC-4R128CEE6B-845 | Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
| MC-4R128CEE6C | Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
| MC-4R128CPE6C-745 | Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4R128CPE6C | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
| MC-4R128CPE6C-653 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
| MC-4R128CPE6C-745 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
| MC-4R128CPE6C-845 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
| MC-4R128FKE6D | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT) |
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