參數(shù)資料
型號(hào): MC-45V8AB641KFA-A10
廠商: NEC Corp.
元件分類: 圓形連接器
英文描述: Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:13; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle; Body Style:Straight RoHS Compliant: No
中文描述: 800萬字,64位VirtualChannel同步動(dòng)態(tài)RAM模塊無緩沖型
文件頁數(shù): 1/16頁
文件大小: 144K
代理商: MC-45V8AB641KFA-A10
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1999
MOS INTEGRATED CIRCUIT
MC-45V8AB641
DATA SHEET
The mark
shows major revised points.
Document No. M14619EJ2V0DS00 (2nd edition)
Date Published June 2000 NS CP (K)
Printed in Japan
8M-WORD BY 64-BIT
VirtualChannel
TM
SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
Description
The MC-45V8AB641 is a 8,388,608 words by 64 bits VirtualChannel synchronous dynamic RAM module on which 4
pieces of 128M VirtualChannel SDRAM :
μ
PD45125161 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
8,388,608 words by 64 bits organization
Clock frequency and access time from CLK
Part number
Read
Clock
Access
Maximum supply current mA
latency
frequency
time
Operating
Refresh
MHz (MAX.) from CLK
ns (MAX.)
Prefetch
Restore
Channel
read / write (Burst)
Auto
Self
MC-45V8AB641KFA-A75
2
133
5.4
600
300
920
8
MC-45V8AB641KFA-A10
100
6
520
300
880
Fully Standard Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Dual internal banks controlled by BA0 (Bank Select)
Programmable wrap sequence (sequential / interleave)
Programmable burst length (1, 2, 4, 8 and 16)
Read latency (2)
Prefetch read latency (4)
Auto precharge and without auto precharge
Auto refresh and self refresh
Single 3.3
V
±
0.3
V power supply
Interface: LVTTL
Refresh cycle: 4K cycles/64
ms
168-pin dual in-line memory module (Pin pitch = 1.27
mm)
Unbuffered type
Serial PD
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