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參數(shù)資料
| 型號(hào)： | MC-45D16CB641KF-C80 |
| 廠商： | NEC Corp. |
| 英文描述： | 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| 中文描述： | 16米字的64位DDR同步動(dòng)態(tài)RAM模塊無(wú)緩沖型 |
| 文件頁(yè)數(shù)： | 5/16頁(yè) |
| 文件大?。?/td> | 241K |
| 代理商： | MC-45D16CB641KF-C80 |
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Preliminary Data Sheet M14898EJ2V0DS00
5
MC-45D16CA721
Electrical Specifications
All voltages are referenced to V
SS
(GND).
After power up, wait more than 1 ms and then, execute
Power on sequence and CBR (auto) refresh
before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to V
SS
V
DD
, V
DD
Q
–0.5 to +3.6
V
Voltage on input pin relative to V
SS
V
T
–0.5 to +3.6
V
Short circuit output current
I
O
50
mA
Power dissipation
P
D
12
W
Storage temperature
T
stg
–55 to +125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
DD
2.3
2.5
2.7
V
Supply voltage for DQ, DQS
V
DD
Q
2.3
2.5
2.7
V
Input reference voltage
V
REF
0.49
×
V
DD
Q
0.51
×
V
DD
Q
V
Termination voltage
V
TT
V
REF
0.04
V
REF
V
REF
+ 0.04
V
High level dc input voltage
V
IH
(DC)
V
REF
+ 0.15
V
DD
+ 0.3
V
Low level dc input voltage
V
IL
(DC)
0.3
V
REF
0.15
V
Input differential voltage (CLK and /CLK)
V
ID
(DC)
0.36
V
DD
Q + 0.6
V
Input crossing point voltage (CLK and /CLK)
V
IX
0.5
×
V
DD
Q–0.2
0.5
×
V
DD
Q+0.2
V
Operating ambient temperature
T
A
0
70
°
C
Capacitance (T
A
= 25
°
C, f = 100 MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I1
A0 - A11, BA0, BA1, /RAS,
/CAS, /WE
TBD
TBD
pF
C
I2
CK0 - CK2, /CK0 - /CK2
TBD
TBD
C
I3
CKE0
TBD
TBD
C
I4
/S0
TBD
TBD
Data input/output capacitance
C
I/O1
DM(0-8)/DQS(9-17),
DQS0 - DQS8
TBD
TBD
pF
C
I/O2
DQ0 - DQ63, CB0 - CB7
TBD
TBD
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-45D16CD641KS | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) |
| MC-45D16CD641KS-C75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) |
| MC-45D16CD641KS-C80 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) |
| MC-45D16DA721 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-45D16DA721KFA-C75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
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