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參數(shù)資料
| 型號： | MC-458CB646 |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-Word By 64-BIT Dynamic RAM Module(8M×64位動態(tài)RAM模塊) |
| 中文描述： | 800萬字，64位動態(tài)RAM模塊（8米× 64位動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 139K |
| 代理商： | MC-458CB646 |
6
MC-458CB646
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Test condition
Grade
MIN.
MAX.
Unit
Notes
Operating current
I
CC1
Burst length
=
1
/CAS latency = 2
-A80
640
mA
1
t
RC
≥
t
RC(MIN.)
, I
O
= 0
mA
-A10
560
/CAS latency = 3
-A80
680
-A10
600
Precharge standby current in
I
CC2
P
CKE
≤
V
IL(MAX.)
, t
CK
=
15
ns
8
mA
power down mode
I
CC2
PS CKE
≤
V
IL(MAX.)
, t
CK
=
∞
4
Precharge standby current in
non power down mode
I
CC2
N
CKE
≥
V
IH(MIN.)
, t
CK
=
15
ns, /CS
≥
V
IH(MIN.)
,
Input signals are changed one time during 30
ns.
160
mA
I
CC2
NS CKE
≥
V
IH(MIN.)
, t
CK
=
∞
Input signals are stable.
48
Active standby current in
I
CC3
P
CKE
≤
V
IL(MAX.)
, t
CK
=
15
ns
40
mA
power down mode
I
CC3
PS CKE
≤
V
IL(MAX.)
, t
CK
=
∞
32
Active standby current in
I
CC3
N
CKE
≥
V
IH(MIN.)
, t
CK
=
15
ns, /CS
≥
V
IH(MIN.)
,
Input signals are changed one time during 30
ns.
200
mA
non power down mode
I
CC3
NS CKE
≥
V
IH(MIN.)
, t
CK
=
∞
Input signals are stable.
80
Operating current
I
CC4
t
CK
≥
t
CK(MIN.)
/CAS latency = 2
-A80
840
mA
2
(Burst mode)
I
O
= 0
mA
-A10
640
/CAS latency = 3
-A80
1,000
-A10
840
Refresh current
I
CC5
t
RC
≥
t
RC(MIN.)
/CAS latency = 2
-A80
1,040
mA
3
-A10
1,040
/CAS latency = 3
-A80
1,080
-A10
1,080
Self refresh current
I
CC6
CKE
≤
0.2
V
8
mA
Input leakage current
I
I(L)
V
I
=
0 to 3.6
V,
All other pins not under test =
0 V
–
8
+
8
μ
A
Output leakage current
I
O(L)
D
OUT
is disabled, V
O
=
0 to 3.6
V
–
1.5
+
1.5
μ
A
High level output voltage
V
OH
I
O
=
–
4.0
mA
2.4
V
Low level output voltage
V
OL
I
O
=
+
4.0
mA
0.4
V
Notes 1.
I
CC1
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC1
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
2
. I
CC4
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC4
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
3.
I
CC5
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
#
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相關(guān)代理商/技術(shù)參數(shù) |
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| MC-458CB646EFB-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CB646EFB-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CB646PFB-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CB646PFB-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CB646XFB-A10 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
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