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| 型號(hào)： | MC-458CB645 |
| 廠商： | NEC Corp. |
| 英文描述： | 8 M-Word By 64-Bit Synchronous Dynamic RAM Module(同步動(dòng)態(tài)RAM 模塊) |
| 中文描述： | 八米，由64個(gè)字位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊（同步動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 6/16頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | MC-458CB645 |
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6
MC-458CB645
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Test condition
MIN.
MAX.
Unit
Notes
Operating current
I
CC1
Burst length = 1,
/CAS latency
= 2
520
mA
1
t
RC
≥
t
RC (MIN.)
, I
O
= 0
mA
/CAS latency
= 3
600
Precharge standby current in
I
CC2
P
CKE
≤
V
IL (MAX.)
, t
CK
= 15
ns
8
mA
power down mode
I
CC2
PS
CKE
≤
V
IL (MAX.)
, t
CK
=
∞
4
Precharge standby current in
I
CC2
N
CKE
≥
V
IH (MIN.)
, t
CK
= 15
ns, /CS
≥
V
IH (MIN.)
,
160
mA
non power down mode
Input signals are changed one time during 30
ns.
I
CC2
NS
CKE
≥
V
IH (MIN.)
, t
CK
=
∞
,
48
Input signals are stable.
Active standby current in
I
CC3
P
CKE
≤
V
IL (MAX.)
, t
CK
= 15
ns
40
mA
power down mode
I
CC3
PS
CKE
≤
V
IL (MAX.)
, t
CK
=
∞
32
Active standby current in
I
CC3
N
CKE
≥
V
IH (MIN.)
, t
CK
= 15
ns, /CS
≥
V
IH (MIN.)
,
200
mA
non power down mode
Input signals are changed one time during 30
ns.
I
CC3
NS
CKE
≥
V
IH (MIN.)
, t
CK
=
∞
,
80
Input signals are stable.
Operating current
I
CC4
t
CK
≥
t
CK (MIN.)
, I
O
= 0
mA
/CAS latency = 2
560
mA
2
(Burst mode)
/CAS latency = 3
840
Refresh current
I
CC5
t
RC
≥
t
RC (MIN.)
/CAS latency = 2
840
mA
3
/CAS latency = 3
920
Self refresh current
I
CC6
t
RC
= 100 ns, t
CK (MIN.)
8
mA
Input leakage current
I
I (L)
V
I
= 0 to 3.6
V,
All other pins not under test = 0 V
–8
+8
μ
A
Output leakage current
I
O (L)
D
OUT
is disabled, V
O
= 0 to 3.6
V
–1.5
+1.5
μ
A
High level output voltage
V
OH
I
O
= –4.0
mA
2.4
V
Low level output voltage
V
OL
I
O
= +4.0
mA
0.4
V
Notes 1.
I
CC1
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC1
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
2
. I
CC4
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC4
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
3.
I
CC5
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
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| MC-458CB646 | 8M-Word By 64-BIT Dynamic RAM Module(8M×64位動(dòng)態(tài)RAM模塊) |
| MC-458CB647 | 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CA727 | 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CA726EFB-A10 | 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CB646EFB-A10 | 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-458CB646 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CB646EFB-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CB646EFB-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CB646PFB-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CB646PFB-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
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