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參數(shù)資料
| 型號(hào)： | MC-458CA726EFB-A10 |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| 中文描述： | 800萬字的72位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊無緩沖型 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 190K |
| 代理商： | MC-458CA726EFB-A10 |
Data Sheet M14279EJ3V0DS00
6
MC-458CB647
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Test condition
MIN.
MAX.
Unit
Notes
Operating current
I
CC1
Burst length =
1
/CAS latency = 2
440
mA
1
t
RC
≥
t
RC(MIN.)
, I
O
= 0
mA
/CAS latency = 3
460
Precharge standby current in
I
CC2
P
CKE
≤
V
IL(MAX.)
, t
CK
=
15
ns
4
mA
power down mode
I
CC2
PS
CKE
≤
V
IL(MAX.)
, t
CK
=
∞
4
Precharge standby current in
I
CC2
N
CKE
≥
V
IH(MIN.)
, t
CK
=
15
ns, /CS
≥
V
IH(MIN.)
,
80
mA
non power down mode
Input signals are changed one time during 30
ns.
I
CC2
NS
CKE
≥
V
IH(MIN.)
, t
CK
=
∞
, Input signals are stable.
32
Active standby current in
I
CC3
P
CKE
≤
V
IL(MAX.)
, t
CK
=
15
ns
20
mA
power down mode
I
CC3
PS
CKE
≤
V
IL(MAX.)
, t
CK
=
∞
16
Active standby current in
I
CC3
N
CKE
≥
V
IH(MIN.)
, t
CK
=
15
ns, /CS
≥
V
IH(MIN.)
,
120
mA
non power down mode
Input signals are changed one time during 30
ns.
I
CC3
NS
CKE
≥
V
IH(MIN.)
, t
CK
=
∞
, Input signals are stable.
80
Operating current
I
CC4
t
CK
≥
t
CK(MIN.)
, I
O
= 0
mA
/CAS latency = 2
580
mA
2
(Burst mode)
/CAS latency = 3
740
CBR (Auto) refresh current
I
CC5
t
RC
≥
t
RC(MIN.)
/CAS latency = 2
920
mA
3
/CAS latency = 3
960
Self refresh current
I
CC6
CKE
≤
0.2
V
8
mA
Input leakage current
I
I(L)
V
I
=
0 to 3.6
V,
All other pins not under test =
0 V
–4
+4
μ
A
Output leakage current
I
O(L)
D
OUT
is disabled, V
O
=
0 to 3.6
V
–1.5
+1.5
μ
A
High level output voltage
V
OH
I
O
=
–4.0
mA
2.4
V
Low level output voltage
V
OL
I
O
=
+4.0
mA
0.4
V
Notes 1.
I
CC1
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC1
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
2
. I
CC4
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC4
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
3
. I
CC5
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
#
#
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| MC-458CA726EFB-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
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| MC-458CA726PFB-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CA727 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CA727EFA-A75 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
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