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參數(shù)資料
| 型號： | MC-454CB645 |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-Word By 64-BIT Dynamic RAM Module(4M×64位動態(tài)RAM模塊) |
| 中文描述： | 分詞，64位動態(tài)RAM模塊（4米× 64位動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 132K |
| 代理商： | MC-454CB645 |
5
MC-454CB645
Electrical Specifications
All voltages are referenced to V
SS
(GND).
After power up, wait more than 100
μ
s and then, execute power on sequence and auto refresh before proper device
operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
V
CC
–0.5 to +4.6
V
Voltage on input pin relative to GND
V
T
–0.5 to +4.6
V
Short circuit output current
I
O
50
mA
Power dissipation
P
D
4
W
Operating ambient temperature
T
A
0 to +70
°
C
Storage temperature
T
stg
–55 to +125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
3.0
3.3
3.6
V
High level input voltage
V
IH
2.0
V
CC
+ 0.3
V
Low level input voltage
V
IL
0.3
+0.8
V
Operating ambient temperature
T
A
0
70
°
C
Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I1
A0 - A11, BA0 (A13), BA1 (A12), /RAS,
/CAS, /WE
41
pF
C
I2
CLK0
38
C
I3
CKE0
34
C
I4
/CS0, /CS2
24
C
I5
DQMB0 - DQMB7
12
Data input / output capacitance
C
I/O
DQ0 - DQ63
13
pF
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