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參數(shù)資料
| 型號： | MC-454AC725 |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-Word By 72-BIT Dynamic RAM Module(4M×72位動態(tài)RAM模塊) |
| 中文描述： | 分詞由72位動態(tài)內(nèi)存模塊（4米× 72位動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 6/20頁 |
| 文件大小： | 184K |
| 代理商： | MC-454AC725 |
6
MC-454AC725
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
[MC-454AC725F-A80, -A10, -A12]
Parameter
Symbol
Test condition
Grade
MIN.
MAX.
Unit
Notes
Operating current
I
CC1
Burst length = 1
/CAS latency
= 2
-A80
1,152
mA
1
t
RC
≥
t
RC (MIN.)
, I
O
= 0
mA
-A10
1,062
-A12
1,062
/CAS latency
= 3
-A80
1,197
-A10
1,107
-A12
1,107
Precharge standby current in
I
CC2
P
CKE
≤
V
IL (MAX.)
, t
CK
= 15
ns
54
mA
power down mode
I
CC2
PS
CKE
≤
V
IL (MAX.)
, t
CK
=
∞
36
Precharge standby current in
I
CC2
N
CKE
≥
V
IH (MIN.)
, t
CK
= 15
ns, /CS
≥
V
IH (MIN.)
,
450
mA
non power down mode
Input signals are changed one time during 30
ns.
I
CC2
NS
CKE
≥
V
IH (MIN.)
, t
CK
=
∞
,
108
Input signals are stable.
Active standby current in
I
CC3
P
CKE
≤
V
IL (MAX.)
, t
CK
= 15
ns
54
mA
power down mode
I
CC3
PS
CKE
≤
V
IL (MAX.)
, t
CK
=
∞
36
Active standby current in
I
CC3
N
CKE
≥
V
IH (MIN.)
, t
CK
= 15
ns, /CS
≥
V
IH (MIN.)
,
504
mA
non power down mode
Input signals are changed one time during 30
ns.
I
CC3
NS CKE
≥
V
IH (MIN.)
, t
CK
=
∞
,
180
Input signals are stable.
Operating current
I
CC4
t
CK
≥
t
CK (MIN.)
,
/CAS latency = 2
-A80
1,377
mA
2
(Burst mode)
I
O
= 0
mA
-A10
1,152
-A12
972
/CAS latency = 3
-A80
1,692
-A10
1,422
-A12
1,242
Refresh current
I
CC5
t
RC
CK
= MIN.
1,062
mA
3
Self refresh current
I
CC6
CKE
≤
0.2
V
36
mA
Input leakage current
I
I (L)
V
I
= 0 to 3.6
V,
All other pins not under test = 0 V
–90
+90
μ
A
Input leakage current (CKE1)
–500
+500
Output leakage current
I
O (L)
D
OUT
is disabled, V
O
= 0 to 3.6
V
–10
+10
μ
A
High level output voltage
V
OH
I
O
= –2.0
mA
2.4
V
Low level output voltage
V
OL
I
O
= +2.0
mA
0.4
V
Notes 1.
I
CC1
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC1
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
2
. I
CC4
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC4
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
3.
I
CC5
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-454AC726 | 4M-Word By 72-BIT Dynamic RAM Module(4M×72位動態(tài)RAM模塊) |
| MC-454AD644-A67 | 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AC724 | 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AC724F-A67 | 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD644 | 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-454AD644 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD644-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD644-A12 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD644-A67 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD646 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
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