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參數(shù)資料
| 型號： | MC-4532CD646EF-A80 |
| 廠商： | NEC Corp. |
| 英文描述： | 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| 中文描述： | 32M的字，64位同步動(dòng)態(tài)RAM模塊無緩沖型 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 153K |
| 代理商： | MC-4532CD646EF-A80 |
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confirm that this is the latest version.
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availability and additional information.
1998
MOS INTEGRATED CIRCUIT
MC-4532CC726
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
DATA SHEET
Document No. M13680EJ5V0DS00 (5th edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The MC-4532CC726 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of
128M SDRAM:
μ
PD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
33,554,432 words by 72 bits organization (ECC type)
Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency
(MAX.)
Access time from CLK
(MAX.)
MC-4532CC726EF-A80
CL = 3
125 MHz
6
ns
CL = 2
100 MHz
6
ns
MC-4532CC726EF-A10
CL = 3
100 MHz
6
ns
CL = 2
77 MHz
7
ns
MC-4532CC726PF-A80
CL = 3
125 MHz
6
ns
CL = 2
100 MHz
6
ns
MC-4532CC726PF-A10
CL = 3
100 MHz
6
ns
CL = 2
77 MHz
7
ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length: 1, 2, 4, 8 and full page
Programmable wrap sequence (Sequential
/
Interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10
±
10
% of series resistor
Single 3.3
V
±
0.3
V power supply
LVTTL compatible
4,096 refresh cycles/64
ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27
mm)
Unbuffered type
Serial PD
#
#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-4532CD646PF-A10 | 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4532CD646PF-A80 | 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4532CD647 | 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4532CD647EF-A75 | 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4532CD647PF-A75 | 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4532CD646PF-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4532CD646PF-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4532CD646XF-A10 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4532CD646XF-A80 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4532CD647 | 制造商:NEC 制造商全稱:NEC 功能描述:32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
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