參數(shù)資料
型號: MC-4516DA726PFC-A80
廠商: NEC Corp.
英文描述: 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
中文描述: 16的M - Word的72位同步動態(tài)隨機(jī)存儲器模塊注冊的類型
文件頁數(shù): 1/16頁
文件大?。?/td> 149K
代理商: MC-4516DA726PFC-A80
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confirm that this is the latest version.
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1999
MOS INTEGRATED CIRCUIT
MC-4516CA726
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
DATA SHEET
Document No. M14333EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The MC-4516CA726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of
128M SDRAM:
μ
PD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 72 bits organization (ECC Type)
Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency
(MAX.)
Access time from CLK
(MAX.)
MC-4516CA726EF-A80
CL = 3
125 MHz
6
ns
CL = 2
100 MHz
6
ns
MC-4516CA726EF-A10
CL = 3
100 MHz
6
ns
CL = 2
77 MHz
7
ns
MC-4516CA726PF-A80
CL = 3
125 MHz
6
ns
CL = 2
100 MHz
6
ns
MC-4516CA726PF-A10
CL = 3
100 MHz
6
ns
CL = 2
77 MHz
7
ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and full page)
Programmable wrap sequence (sequential
/
interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10
±
10
% of series resistor
Single 3.3
V
±
0.3
V power supply
LVTTL compatible
4,096 refresh cycles/64
ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27
mm)
Unbuffered type
Serial PD
#
#
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