- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383554 > MC-4516DA726 (NEC Corp.) 16M-Word By72-BIT Dynamic RAM Module(16M×72位動(dòng)態(tài)RAM模塊) PDF資料下載
參數(shù)資料
| 型號(hào)： | MC-4516DA726 |
| 廠商： | NEC Corp. |
| 英文描述： | 16M-Word By72-BIT Dynamic RAM Module(16M×72位動(dòng)態(tài)RAM模塊) |
| 中文描述： | 1,600詞By72位動(dòng)態(tài)內(nèi)存模塊（1,600 × 72位動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 7/16頁 |
| 文件大?。?/td> | 164K |
| 代理商： | MC-4516DA726 |
Data Sheet M13203EJ3V0DS00
7
MC-4516DA726
[MC-4516DA726LF]
Parameter
Symbol
Test condition
MIN.
MAX.
Unit
Notes
-A80
1,650
mA
1
/CAS latency = 2
-A10
1,470
-A80
1,740
Operating current
I
CC1
Burst length
=
1, t
RC
≥
t
RC(MIN.)
,
I
O
= 0
mA
/CAS latency = 3
-A10
1,560
Precharge standby current in I
CC2
P
CKE
≤
V
IL(MAX.)
, t
CK
=
15
ns
268
mA
power down mode
I
CC2
PS CKE
≤
V
IL(MAX.)
, t
CK
=
∞
26
Precharge standby current in
non power down mode
I
CC2
N CKE
≥
V
IH (MIN.)
, t
CK
=
15
ns, /CS
≥
V
IH (MIN.)
,
Input signals are changed one time during 30
ns.
I
CC2
NS CKE
≥
V
IH (MIN.)
, t
CK
=
∞
,
Input signals are stable.
I
CC3
P
CKE
≤
V
IL(MAX.)
, t
CK
=
15
ns
610
mA
108
Active standby current in
340
mA
power down mode
I
CC3
PS CKE
≤
V
IL(MAX.)
, t
CK
=
∞
72
Active standby current in
I
CC3
N CKE
≥
V
IH(MIN.)
, t
CK
=
15
ns, /CS
≥
V
IH(MIN.)
,
700
mA
non power down mode
Input signals are changed one time during 30
ns.
I
CC3
NS CKE
≥
V
IH (MIN.)
, t
CK
=
∞
,
Input signals are stable.
I
CC4
t
CK
≥
t
CK(MIN.)
, I
O
= 0
mA
270
Operating current
/CAS latency = 2
-A80
1,920
mA
2
(Burst mode)
-A10
1,560
/CAS latency = 3
-A80
2,190
-A10
1,920
CBR (Auto) refresh current
I
CC5
t
RC
≥
t
RC(MIN.)
/CAS latency = 2
-A80
2,640
mA
3
-A10
2,640
/CAS latency = 3
-A80
2,730
-A10
2,730
Self refresh current
I
CC6
CKE
≤
0.2
V
268
mA
Input leakage current
I
I(L)
V
I
=
0 to 3.6
V,
All other pins not under test =
0 V
–
10
+
10
μ
A
Output leakage current
I
O(L)
D
OUT
is disabled, V
O
=
0 to 3.6
V
–
1.5
+
1.5
μ
A
High level output voltage
V
OH
I
O
=
–
4.0
mA
2.4
V
Low level output voltage
V
OL
I
O
=
+
4.0
mA
0.4
V
Notes 1.
I
CC1
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC1
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
2
. I
CC4
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC4
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
3.
I
CC5
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-4516DA72 | 16 M-Word By 72-Bit Synchronous Dynamic RAM Module(同步動(dòng)態(tài)RAM 模塊) |
| MC-4516DC72 | 16 M-Word By 72-Bit Synchronous Dynamic RAM Module(同步動(dòng)態(tài)RAM 模塊) |
| MC-4532CC726 | 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4532CC727 | 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4532DA727 | 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4516DA726EFC-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4516DA726EFC-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4516DA726PFC-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4516DA726PFC-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4516DA726XFC-A10 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。