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參數(shù)資料
| 型號(hào)： | MC-4516CC726 |
| 廠商： | NEC Corp. |
| 英文描述： | 16M-Word By 72-BIT Dynamic RAM Module(16M×72位動(dòng)態(tài)RAM模塊) |
| 中文描述： | 1,600 - Word的72位動(dòng)態(tài)內(nèi)存模塊（1,600 × 72位動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 5/16頁(yè) |
| 文件大?。?/td> | 155K |
| 代理商： | MC-4516CC726 |
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MC-4516CC726
Electrical Specifications
All voltages are referenced to V
SS
(GND).
After power up, wait more than 100
μ
s and then, execute power on sequence and auto refresh before proper device
operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
V
CC
–0.5 to +4.6
V
Voltage on input pin relative to GND
V
T
–0.5 to +4.6
V
Short circuit output current
I
O
50
mA
Power dissipation
P
D
18
W
Operating ambient temperature
T
A
0 to +70
°
C
Storage temperature
T
stg
–55 to +125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
3.0
3.3
3.6
V
High level input voltage
V
IH
2.0
V
CC
+
0.3
V
Low level input voltage
V
IL
0.3
+0.8
V
Operating ambient temperature
T
A
0
70
°
C
Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I1
A0 - A11, BA0 (A13), BA1 (A12), /RAS,
/CAS, /WE
63
102
pF
C
I2
CLK0 - CLK3
24
40
C
I3
CKE0, CKE1
34
56
C
I4
/CS0 - /CS3
17
33
C
I5
DQMB0 - DQMB7
10
21
Data input/output capacitance
C
I/O
DQ0 - DQ63, CB0 - CB7
11
19
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-4516CD641ES-A10 | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641ES-A80 | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641ES | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS-A10 | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4516CD641ES | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641ES-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641ES-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
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