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參數(shù)資料
| 型號： | MC-4516CB646 |
| 廠商： | NEC Corp. |
| 英文描述： | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| 中文描述： | 1,600字，64位同步動態(tài)RAM模塊無緩沖型 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 149K |
| 代理商： | MC-4516CB646 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999
MOS INTEGRATED CIRCUIT
MC-4516CA726
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
DATA SHEET
Document No. M14333EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The MC-4516CA726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of
128M SDRAM:
μ
PD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 72 bits organization (ECC Type)
Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency
(MAX.)
Access time from CLK
(MAX.)
MC-4516CA726EF-A80
CL = 3
125 MHz
6
ns
CL = 2
100 MHz
6
ns
MC-4516CA726EF-A10
CL = 3
100 MHz
6
ns
CL = 2
77 MHz
7
ns
MC-4516CA726PF-A80
CL = 3
125 MHz
6
ns
CL = 2
100 MHz
6
ns
MC-4516CA726PF-A10
CL = 3
100 MHz
6
ns
CL = 2
77 MHz
7
ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and full page)
Programmable wrap sequence (sequential
/
interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10
±
10
% of series resistor
Single 3.3
V
±
0.3
V power supply
LVTTL compatible
4,096 refresh cycles/64
ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27
mm)
Unbuffered type
Serial PD
#
#
相關PDF資料 |
PDF描述 |
|---|---|
| MC-4516CB647 | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4516CA726 | 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4516CA727 | 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4516DA726EFC-A80 | 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4516DA727 | 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4516CB646EF-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4516CB646EF-A80 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4516CB646PF-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4516CB646PF-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4516CB646XF-A10 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
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