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參數(shù)資料
| 型號： | MBV109T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Silicon Epicap Diode |
| 中文描述： | 硅二極管Epicap |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 146K |
| 代理商： | MBV109T1 |
LESHAN RADIO COMPANY, LTD.
MBV109. MMBV109*. MV209*
–2/2
MBV109T1 MMBV109LT1 MV209
C
T
,
Q
1000
100
10
10
100
1000
40
36
32
28
24
20
16
12
8
4
0
1
3
10
30
100
f
, FREQUENCY ( MHz )
Figure 2. Figure of Merit
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
–75
–50
–25
0
+25
+50
+75
+100
+125
T
A
, AMBIENT TEMPERATURE (
°C
)
Figure 4. Diode Capacitance
C
T
,
100
20
10
2.0
1.0
0.2
0.1
0.02
0.01
0.002
0.001
–60
–40
–20
0
20
40
60
80
100
120
140
T
A
, AMBIENT TEMPERATURE (
°C
)
Figure 3 . Leakage Current
I
R
,
NOTES ON TESTING AND SPECIFICATIONS
1. C
R
is the ratio of C
t
measured at 3.0 Vdc divided by C
t
measured at 25 Vdc.
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