參數(shù)資料
型號(hào)： MBT3946DW1T2
廠(chǎng)商： ON SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： Dual General Purpose Transistor
中文描述： 200 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： CASE 419B-02, SC-88, 6 PIN
文件頁(yè)數(shù)： 3/10頁(yè)
文件大?。?/td> 422K
代理商： MBT3946DW1T2
LESHAN RADIO COMPANY, LTD.
MBT3904–3/12
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 100
μ
Adc,
R
S
= 1.0 k W, f = 1.0 kHz)
(V
CE
= –5.0 Vdc, I
C
= –100
μ
Adc,
R
S
= 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time (V
CC
= 3.0 Vdc, V
BE
= –0.5 Vdc)
(V
CC
= –3.0 Vdc, V
BE
= 0.5 Vdc)
Rise Time (I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
(I
C
= –10 mAdc, I
B1
= –1.0 mAdc)
Storage Time (V
CC
= 3.0 Vdc, I
C
= 10 mAdc)
(V
CC
= –3.0 Vdc, I
C
= –10 mAdc)
Fall Time (I
B1
= I
B2
= 1.0 mAdc)
(I
B1
= I
B2
= –1.0 mAdc)
Symbol
h
ie
Min
Max
Unit
k
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
1.0
2.0
10
12
h
re
X 10
–4
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
0.5
0.1
8.0
10
h
fe
—
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
100
100
400
400
h
oe
μ
mhos
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
1.0
3.0
40
60
NF
dB
MBT3904DW1T1 (NPN)
—
5.0
MBT3906DW1T1 (PNP)
—
4.0
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
t
d
—
—
—
—
—
—
—
—
35
35
35
35
200
225
50
70
ns
t
r
ns
t
s
ns
t
f
ns
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參數(shù)描述
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