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參數(shù)資料
| 型號： | MBT2907ADW |
| 廠商： | WEITRON INTERNATIONAL CO., LTD. |
| 英文描述： | Dual General Purpose Transistor PNP+PNP Silicon |
| 中文描述： | 雙通用硅晶體管的新進(jìn)步黨進(jìn)步黨 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MBT2907ADW |
Dual General Purpose Transistor
PNP+PNP Silicon
Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-60
-60
-5.0
-600
Unit
Vdc
Vdc
Vdc
mAdc
Rating
MBT2907ADW=2F
Device Marking
WEITRON
http://www.weitron.com.tw
MBT2907ADW
Collector-Emitter Breakdown Voltage
(2)
(I
C
=-10mAdc.I
B
=0)
Collector-Base Breakdown Voltage (I
C
=-10 uAdc, I
E
=0)
Emitter-Base Breakdown Voltage (I
E
=10 uAdc, I
C
=0)
Base Cutoff Current (V
CE
=-30 Vdc, V
EB
=-0.5 Vdc)
Collector Cutoff Current (V
CE
=-30Vdc, V
EB
=-0.5Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
-50
-50
Vdc
Vdc
Vdc
nAdc
nAdc
Off Characteristics
-60
-60
-5.0
-
-
-
-
-
Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
Total Device Dissipation T
A
=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Characteristics
TJ,Tstg
PD
Symbol
Max
200
625
-55 to +150
Unit
mW
C/W
C
Thermal Characteristics
R JA
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.
2. Pulse Test:Pulse Width 300uS, Duty Cycle 2.0%
SOT-363(SC-88)
123
654
3
4
5
1
2
6
PNP+PNP
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