參數(shù)資料
型號(hào): MBRS410LT3
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Surface Mount Schottky Barrier Power Rectifier(4A,10V表面安裝肖特基勢(shì)壘功率整流管)
中文描述: 4 A, 10 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, CASE 403-03, SMC, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 54K
代理商: MBRS410LT3
MBRS410LT3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min Pad
(Note 2)
1 Inch
Pad
Unit
Thermal Resistance,
JunctiontoLead
Thermal Resistance,
JunctiontoAmbient
R
JL
R
JA
12
109
7.0
59
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
V
F
T
J
= 25
°
C
T
J
= 100
°
C
V
(I
F
= 2.0 A)
(I
F
= 4.0 A)
(I
F
= 8.0 A)
0.31
0.33
0.35
0.200
0.225
0.250
Maximum Instantaneous Reverse Current (Note 1)
I
R
T
J
= 25
°
C
T
J
= 100
°
C
mA
(Rated dc Voltage, V
R
= 5.0 V)
(Rated dc Voltage, V
R
= 10 V)
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2%.
2. Mounted with Minimum Recommended Pad Size, PC Board FR4.
2.0
5.0
100
200
0.1
V
F
, INSTANTANEOUS VOLTAGE (V)
0.3
0.4
0
0.2
0.5
100
0.1
10
1
2
6
10
0
4
8
10000
1000
C
V
R
, REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance
Figure 1. Typical Forward Voltage
0.1
V
F
, INSTANTANEOUS VOLTAGE (V)
0.3
0.4
0
0.2
0.5
100
0.1
10
I
F
,
Figure 2. Maximum Forward Voltage
I
F
,
Figure 3. Typical Reverse Current
2
6
10
0
4
8
1.00E04
1.00E03
I
R
,
V
R
, REVERSE VOLTAGE (V)
V
F
@ 125
°
C
100
°
C
75
°
C
40
°
C
25
°
C
V
F
@ 125
°
C
100
°
C
25
°
C
1.00E02
1.00E01
1.00E+00
I
R
@ 125
°
C
100
°
C
75
°
C
25
°
C
1
75
°
C
25
°
C
f = 1 Mhz
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