參數(shù)資料
型號(hào): MBRS2040LT3G
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Surface Mount Schottky Power Rectifier
中文描述: 2 A, 40 V, SILICON, RECTIFIER DIODE
封裝: LEAD FREE PLASTIC SMB PACKAGE, 2 PIN
文件頁數(shù): 3/4頁
文件大小: 134K
代理商: MBRS2040LT3G
3
Rectifier Device Data
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
Figure 9. Thermal Response Junction to Lead
Figure 10. Thermal Response Junction to Ambient
30
0
VR, REVERSE VOLTAGE (VOLTS)
1000
100
10
VR, DC REVERSE VOLTAGE (VOLTS)
25
40
0
105
85
75
65
100
0.1
0.00001
T, TIME (s)
1.0
0.1
0.01
C
T
J
R
15
5.0
10
20
25
35
40
30
35
5.0
10
20
15
95
115
125
0.0001
0.001
0.01
1.0
10
,
°
0.001
,
(
T, TIME (s)
1.0
0.1
0.01
R
0.001
,
(
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax – r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax – r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
Rtja = 22.5
°
C/W
42
°
C/W
61
°
C/W
78
°
C/W
92
°
C/W
Rtjl(t) = Rtjl*r(t)
50%
20%
10%
5.0%
2.0%
1.0%
100
0.1
0.00001
1,000
0.0001
0.001
0.01
1.0
10
Rtjl(t) = Rtjl*r(t)
50%
20%
10%
5.0%
2.0%
1.0%
TJ = 25
°
C
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