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參數(shù)資料
| 型號(hào)： | MBRS130TR |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-214AA |
| 封裝： | SMB, SIMILAR TO DO-214AA, 2 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 89K |
| 代理商： | MBRS130TR |
Document Number: 94318
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 15-Aug-08
3
MBRS130TRPbF
Schottky Rectifier, 1.0 A
Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
0.1
1.0
10
I F
-
Instantaneous
Forward
Current
(A)
VFM - Forward Voltage Drop (V)
0.4
0.6
0.8
1.0
1.2
1.4
0.2
T
J = 125 °C
T
J = 25 °C
0.0001
0.1
1.0
0.01
0.001
10
I R
-Reverse
Current
(mA)
VR - Reverse Voltage (V)
10
20
30
0
T
J = 125 °C
T
J = 100 °C
T
J = 75 °C
T
J = 50 °C
T
J = 25 °C
10
100
1000
C
T
-Junction
Capacitance
(pF)
VR - Reverse Voltage (V)
10
20
30
0
T
J = 25 °C
IF(AV) - Average Forward Current (A)
Allowable
Lead
Temperature
(°C)
70
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
80
90
100
110
120
130
DC
Square wave (D = 0.50)
Rated V
R applied
See note (1)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0
0.1
0.5
0.6
0.4
0.3
0.2
0.7
Average
Power
Loss
(W)
IF(AV) - Average Forward Current (A)
0.4
0.2
0.6
0.8
1.6
1.0
1.2
1.4
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
10
100
1000
I FSM
-
Non-Repetitive
Surge
Current
(A)
tp - Square Wave Pulse Duration (s)
100
1000
10 000
10
At any rated load condition
and with rated V
RRM applied
following surge
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