參數(shù)資料
型號: MBRM130LT1
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Surface Mount Schottky Power Rectifier
中文描述: 1 A, 30 V, SILICON, SIGNAL DIODE, DO-216AA
封裝: PLASTIC, CASE 457-04, POWERMITE-2
文件頁數(shù): 2/8頁
文件大?。?/td> 93K
代理商: MBRM130LT1
MBRM130L
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RRM
V
RWM
V
R
30
V
Average Rectified Forward Current (At Rated V
R
, T
C
= 135
°
C)
I
O
1.0
A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 100 kHz, T
C
= 135
°
C)
I
FRM
2.0
A
Non-Repetitive Peak Surge Current
(Non-Repetitive peak surge current, halfwave, single phase, 60 Hz)
I
FSM
50
A
Storage Temperature
T
stg
-55 to 150
°
C
Operating Junction Temperature
T
J
-55 to 125
°
C
Voltage Rate of Change (Rated V
R
, T
J
= 25
°
C)
THERMAL CHARACTERISTICS
dv/dt
10,000
V/ s
Thermal Resistance - Junction-to-Lead (Anode) (Note 1)
Thermal Resistance - Junction-to-Tab (Cathode) (Note 1)
Thermal Resistance - Junction-to-Ambient (Note 1)
R
tjl
R
tjtab
R
tja
35
23
277
°
C/W
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10.
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
V
F
T
J
= 25
°
C
T
J
= 85
°
C
V
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 3.0 A)
0.30
0.38
0.52
0.20
0.33
0.50
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
I
R
T
J
= 25
°
C
T
J
= 85
°
C
mA
(V
R
= 30 V)
(V
R
= 20 V)
(V
R
= 10 V)
2. Pulse Test: Pulse Width
250
μ
s, Duty Cycle
2%.
0.41
0.13
0.05
11
5.3
3.2
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