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參數(shù)資料
| 型號(hào)： | MBRM120ET3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Surface Mount Schottky Power Rectifier |
| 中文描述： | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-216AA |
| 封裝： | PLASTIC, CASE 457-04, POWERMITE-2 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 90K |
| 代理商： | MBRM120ET3 |
MBRM120E
http://onsemi.com
4
P
I
Ipk/Io = 5
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
45
85
25
TL, LEAD TEMPERATURE (
°
C)
1.8
1.2
1.0
0.8
0.2
0
IO, AVERAGE FORWARD CURRENT (AMPS)
0.2
0
0.7
0.6
0.5
0.3
0.1
0
1.0
65
105
145
125
1.4
0.4
0.8
1.2
1.6
0.4
165
1.6
SQUARE
WAVE
dc
Ipk/Io =
Ipk/Io = 10
Ipk/Io = 20
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io =
SQUARE WAVE
dc
0.6
0.4
FREQ = 20 kHz
0.6
1.4
0.2
T
(
C
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
12
0
VR, REVERSE VOLTAGE (VOLTS)
1000
100
10
VR, DC REVERSE VOLTAGE (VOLTS)
6.0
20
0
146
144
6.0
2.0
4.0
8.0
10
8.0
10
2.0
4.0
148
150
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax – r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax – r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
Rtja = 33.72
°
C/W
51
°
C/W
83.53
°
C/W
96
°
C/W
TJ = 25
°
C
20
18
12
14
69
°
C/W
16
14
16
18
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| MBRS3100T3 | Surface Mount Schottky Power Rectifier |
| MBRS3100T3D | Surface Mount Schottky Power Rectifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRM120ET3G | 功能描述:肖特基二極管與整流器 1A 20V Low Leakage RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRM120ET3G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MBRM120L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
| MBRM120LT1 | 功能描述:肖特基二極管與整流器 1A 20V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRM120LT1G | 功能描述:肖特基二極管與整流器 1A 20V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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