參數(shù)資料
型號: MBRM120E
廠商: ON SEMICONDUCTOR
英文描述: Surface Mount Schottky Power Rectifier
中文描述: 表面貼裝功率肖特基整流器
文件頁數(shù): 4/8頁
文件大?。?/td> 90K
代理商: MBRM120E
MBRM120E
http://onsemi.com
4
P
I
Ipk/Io = 5
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
45
85
25
TL, LEAD TEMPERATURE (
°
C)
1.8
1.2
1.0
0.8
0.2
0
IO, AVERAGE FORWARD CURRENT (AMPS)
0.2
0
0.7
0.6
0.5
0.3
0.1
0
1.0
65
105
145
125
1.4
0.4
0.8
1.2
1.6
0.4
165
1.6
SQUARE
WAVE
dc
Ipk/Io =
Ipk/Io = 10
Ipk/Io = 20
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io =
SQUARE WAVE
dc
0.6
0.4
FREQ = 20 kHz
0.6
1.4
0.2
T
(
C
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
12
0
VR, REVERSE VOLTAGE (VOLTS)
1000
100
10
VR, DC REVERSE VOLTAGE (VOLTS)
6.0
20
0
146
144
6.0
2.0
4.0
8.0
10
8.0
10
2.0
4.0
148
150
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax – r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax – r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
Rtja = 33.72
°
C/W
51
°
C/W
83.53
°
C/W
96
°
C/W
TJ = 25
°
C
20
18
12
14
69
°
C/W
16
14
16
18
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