參數(shù)資料
型號(hào)： MBRF3035CT-HE3/45
廠商： VISHAY SEMICONDUCTORS
元件分類： 整流器
英文描述： 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 486K
代理商： MBRF3035CT-HE3/45
New Product
MBR(F,B)3035CT & MBR(F,B)3045CT
Vishay General Semiconductor
Document Number: 88677
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
15 A x 2
VRRM
35 V, 45 V
IFSM
200 A
VF
0.60 V
TJ max.
150 °C
TO-263AB
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR3035CT
MBR3045CT
ITO-220AB
MBRF3035CT
MBRF3045CT
MBRB3035CT
MBRB3045CT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR3035CT
MBR3045CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
V
Working peak reverse voltage
VRWM
35
45
V
Maximum DC blocking voltage
VDC
35
45
V
Maximum average forward rectified current
total device
per diode
IF(AV)
30
15
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
200
A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz
IRRM
2.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
相關(guān)PDF資料
PDF描述
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MBRF2060CT-HE3/45 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
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