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參數(shù)資料
| 型號(hào)： | MBRF10H35 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Schottky Barrier Rectifiers |
| 中文描述： | 肖特基 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 72K |
| 代理商： | MBRF10H35 |
MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
2
Document Number 88780
03-Mar-03
Maximum Ratings
(T
C
= 25 °C unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximumaverage forward rectified current (See fig.1)
Peak repetitive forward current at T
C
= 150 °C
(20 KHz sq. wave)
Non-repetitive avalanche energy
at 25
°
C, I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Peak repetitive reverse current
at t
p
= 2.0
μ
s, 1 KH
Z
Peak non-repetitive reverse energy (8/20
μ
s waveform)
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
MBR10H35 MBR10H45 MBR10H50 MBR10H60
35
45
35
45
35
45
10
Unit
V
V
V
A
50
50
50
60
60
60
I
FRM
20
A
E
AS
80
mJ
I
FSM
150
A
I
RRM
1.0
0.5
A
E
RSM
20
10
mJ
V
C
25
kV
dv/dt
T
J
T
STG
10,000
–65 to +175
–65 to +175
4500
(1)
3500
(2)
1500
(3)
V/
μ
s
°C
°C
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH
≤
30%
V
ISOL
V
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
MBR10H35, MBR10H45 MBR10H50, MBR10H60
Typ
Max
–
0.63
0.49
0.55
–
0.75
0.62
0.68
–
100
4.0
12
Unit
Typ
–
0.57
–
0.68
–
2.0
Max
0.71
0.61
0.85
0.71
100
12
Maximum instantaneous
forward voltage
(4)
at I
F
= 10 A
at I
F
= 10 A
at I
F
= 20 A
at I
F
= 20 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
=125 °C
T
J
= 25 °C
T
J
=125 °C
V
F
V
Maximum instantaneous reverse current
at rated DC blocking voltage
(4)
μ
A
mA
I
R
Thermal Characteristics
(T
C
= 25 °C unless otherwise noted)
Parameter
Maximum thermal resistance
Symbol
R
θ
JC
MBR
2.0
MBRF
4.0
MBRB
2.0
Unit
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤
4.9 mm (0.19”)
(4) Pulse test: 300
μ
s pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR10H35 – MBR10H60
TO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
MBRF10H35 – MBRF10H60
ITO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
31
45
81
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
MBRB10H35 – MBRB10H60
TO-263AB
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PDF描述 |
|---|---|
| MBRF10H60 | Schottky Barrier Rectifiers |
| MBR120VLSFT3 | Surface Mount Schottky Power Rectifier |
| MBR120LSFT3 | Surface Mount Schottky Power Rectifier |
| MBR16H35 | Schottky Barrier Rectifiers |
| MBR16H45 | Schottky Barrier Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRF10H45 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Barrier Rectifier |
| MBRF10H45-E3/45 | 功能描述:肖特基二極管與整流器 10 Amp 45 Volt 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRF10H45HE3/45 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Barrier Rectifier |
| MBRF10H50 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Barrier Rectifier |
| MBRF10H60 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Barrier Rectifiers |
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