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參數(shù)資料
| 型號： | MBRD835L |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHMODE Power Rectifiers(開關(guān)模式功率整流器) |
| 中文描述： | 8 A, 35 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 66K |
| 代理商： | MBRD835L |
MBRD835L
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
35
V
Average Rectified Forward Current
(At Rated V
R
, T
C
= 88
°
C)
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 kHz, T
C
= 80
°
C)
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
I
F(AV)
8.0
A
I
FRM
16
A
I
FSM
75
A
Repetitive Avalanche Current
(Current Decaying Linearly to Zero in 1 s, Frequency Limited by T
Jmax
)
Storage / Operating Case Temperature
I
AR
2.0
A
T
stg
T
J
dv/dt
65 to +150
°
C
°
C
Operating Junction Temperature (Note 1)
65 to +150
Voltage Rate of Change (Rated V
R
)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not
implied, damage may occur and reliability may be affected.
10,000
V/ s
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance JunctiontoCase
R
JC
R
JA
2.8
°
C/W
°
C/W
Thermal Resistance JunctiontoAmbient (Note 2)
80
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3) (i
F
= 8 Amps, T
C
= +25
°
C)
(i
F
= 8 Amps, T
C
= +125
°
C)
V
F
0.51
0.41
V
Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, T
C
= +25
°
C)
(Rated dc Voltage, T
C
= +100
°
C)
I
R
1.4
35
mA
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
2. Rating applies when surface mounted on the minimum pad size recommended.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRD835L_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE Power Rectifier |
| MBRD835LG | 功能描述:肖特基二極管與整流器 8A 35V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRD835L-T | 功能描述:DIODE SCHOTTKY 35V 8A DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MBRD835LT4 | 功能描述:肖特基二極管與整流器 8A 35V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRD835LT4G | 功能描述:肖特基二極管與整流器 8A 35V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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