參數(shù)資料
型號(hào)： MBRD660CTT4G
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 參考電壓二極管
英文描述： SWITCHMODE Power Rectifiers
中文描述： 3 A, 60 V, SILICON, RECTIFIER DIODE
封裝： LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 96K
代理商： MBRD660CTT4G
1
Rectifier Device Data
DPAK Surface Mount Package
. . . in switching power supplies, inverters and as free wheeling diodes, these
state–of–the–art devices have the following features:
Extremely Fast Switching
Extremely Low Forward Drop
Platinum Barrier with Avalanche Guardrings
Guaranteed Reverse Avalanche
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 260
°
C
Max. for 10 Seconds
Shipped 75 units per plastic tube
Available in 16 mm Tape and Reel, 2500 units per reel, by adding a “T4’’
suffix to the part number
Marking: B620T, B630T, B640T, B650T, B660T
MAXIMUM RATINGS
Rating
Symbol
MBRD
Unit
620CT
630CT
640CT
650CT
660CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
50
60
Volts
Average Rectified Forward Current
TC = 130
°
C (Rated VR)
Per Diode
Per Device
IF(AV)
3
6
Amps
Peak Repetitive Forward Current, TC = 130
°
C
(Rated VR, Square Wave, 20 kHz) Per Diode
IFRM
6
Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
75
Amps
Peak Repetitive Reverse Surge Current (2
μ
s, 1 kHz)
IRRM
TJ
Tstg
dv/dt
1
Amp
Operating Junction Temperature
–65 to +150
°
C
Storage Temperature
–65 to +175
°
C
Voltage Rate of Change (Rated VR)
THERMAL CHARACTERISTICS PER DIODE
10000
V/
μ
s
Maximum Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
6
°
C/W
Maximum Thermal Resistance, Junction to Ambient (1)
80
°
C/W
(1) Rating applies when surface mounted on the minimum pad size recommended.
SWITCHMODE is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MBRD620CT/D
SEMICONDUCTOR TECHNICAL DATA
1
3
4
SCHOTTKY BARRIER
RECTIFIERS
6 AMPERES
20 TO 60 VOLTS
CASE 369A–13
PLASTIC
MBRD620CT, MBRD640CT and
MBRD660CT are
Motorola Preferred Devices
1
3
4
Rev 1
相關(guān)PDF資料
PDF描述
MBRD660CT SWITCHMODE⑩ Power Rectifirers DPAK Surface Mount Package
MBRD620 SWITCHMODE⑩ Power Rectifirers DPAK Surface Mount Package
MBRD620CT SWITCHMODE⑩ Power Rectifirers DPAK Surface Mount Package
MBRD630CT SWITCHMODE⑩ Power Rectifirers DPAK Surface Mount Package
MBRP20060CT SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBRD660CTTR 功能描述:肖特基二極管與整流器 6.0 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRD660CTTRL 功能描述:肖特基二極管與整流器 6.0 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRD660CTTRLPBF 制造商:Vishay Angstrohm 功能描述:Diode Schottky 60V 6A 3-Pin(2+Tab) DPAK T/R 制造商:Vishay 功能描述:Diode Schottky 60V 6A 3-Pin(2+Tab) DPAK T/R
MBRD660CTTRPBF 制造商:Vishay Angstrohm 功能描述:Diode Schottky 60V 6A 3-Pin(2+Tab) DPAK T/R
MBRD660CTTRR 功能描述:肖特基二極管與整流器 6.0 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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