參數(shù)資料
型號: MBRB30H60CT-1D
廠商: ON SEMICONDUCTOR
英文描述: SWITCHMODE Power Rectifier 60 V, 30 A
中文描述: 開關(guān)模式電源整流器60伏特,30甲
文件頁數(shù): 2/6頁
文件大?。?/td> 66K
代理商: MBRB30H60CT-1D
MBRB30H60CT1
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60
V
Average Rectified Forward Current
(Rated V
R
) T
C
= 159
°
C
I
F(AV)
15
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz)
I
FRM
30
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
260
A
Operating Junction Temperature (Note 1)
T
J
55 to +175
°
C
Storage Temperature
T
stg
55 to +175
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10,000
V/ s
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
W
AVAL
350
mJ
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
2.0
70
°
C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 15 A, T
C
= 25
°
C)
(I
F
= 15 A, T
C
= 125
°
C)
(I
F
= 30 A, T
C
= 25
°
C)
(I
F
= 30 A, T
C
= 125
°
C)
v
F
0.62
0.56
0.78
0.71
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
C
= 25
°
C)
(Rated DC Voltage, T
C
= 125
°
C)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
2.0%.
i
R
0.3
45
mA
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