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參數(shù)資料
| 型號： | MBRB25H45CT-E3/31 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 149K |
| 代理商： | MBRB25H45CT-E3/31 |
www.vishay.com
2
Document Number 88789
22-Aug-06
Vishay General Semiconductor
MBR(F,B)25H35CT thru MBR(F,B)25H60CT
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Ω
VC
25
kV
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 65 to + 175
°C
Storage temperature range
TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
VAC
1500
V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR25H35CT
MBR25H45CT
MBR25H50CT
MBR25H60CT
UNIT
TYP
MAX
TYP
MAX
Maximum instantaneous forward voltage
per diode (1)
at IF = 15 A
at IF = 30 A
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VF
-
0.50
-
0.63
0.64
0.54
0.74
0.67
-
0.56
-
0.68
0.70
0.60
0.85
0.72
V
Maximum instantaneous reverse current
at rated DC blocking voltage per diode (1)
Tj = 25 °C
Tj = 125 °C
IR
-
6.0
100
20
-
4.0
100
20
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Thermal resistance from junction to case per diode
RθJC
1.5
4.5
1.5
°C/W
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR25H35CT
MBR25H45CT
MBR25H50CT
MBR25H60CT
UNIT
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR25H45CT-E3/45
1.85
45
50/Tube
Tube
ITO-220AB
MBR25H45CT-E3/45
1.99
45
50/Tube
Tube
TO-263AB
MBRB25H45CT-E3/45
1.35
45
50/Tube
Tube
TO-263AB
MBRB25H45CT-E3/81
1.35
81
800/Reel
Tape Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBRB30H60CT-E3/31 | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB4045CTPBF | 20 A, 45 V, SILICON, RECTIFIER DIODE |
| MBRF10100 | 10 A, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF10150-G | 10 A, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF1045CT | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRB25H45CTHE3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB25H45CTHE3/45 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRB25H45CTHE3/81 | 功能描述:肖特基二極管與整流器 45 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRB25H50CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRB25H60CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
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