參數(shù)資料
型號(hào): MBRB1545CT
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Schottky Barrier Power Rectifier(15A,45V肖特基勢(shì)壘功率整流器)
中文描述: 7.5 A, 45 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, CASE 418B-04, D2PAK-3
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 60K
代理商: MBRB1545CT
MBRB1545CT
http://onsemi.com
2
MAXIMUM RATINGS
(Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 105
°
C) Total Device
I
F(AV)
7.5
15
A
Peak Repetitive Forward Current, (Rated V
R
, Square Wave, 20 kHz, T
C
= 105
°
C)
I
FRM
15
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
I
RRM
1.0
A
Storage Temperature Range
T
stg
65 to +175
°
C
Operating Junction Temperature
T
J
65 to +150
°
C
Voltage Rate of Change (Rated V
R
)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
dv/dt
10,000
V/ s
THERMAL CHARACTERISTICS
(Per Leg)
Characteristic
Symbol
Value
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient (Note 1)
R
JC
R
JA
2.0
50
°
C/W
ELECTRICAL CHARACTERISTICS
(Per Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 7.5 Amps, T
J
= 125
°
C)
(i
F
= 15 Amps, T
J
= 125
°
C)
(i
F
= 15 Amps, T
J
= 25
°
C)
V
F
0.57
0.72
0.84
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 125
°
C)
(Rated dc Voltage, T
J
= 25
°
C)
1. When mounted using minimum recommended pad size on FR4 board.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
2.0%.
i
R
15
0.1
mA
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