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參數(shù)資料
| 型號(hào)： | MBRA340T3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Surface Mount Schottky Power Rectifier |
| 中文描述： | 3 A, 40 V, SILICON, RECTIFIER DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 403D-02, SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | MBRA340T3G |
MBRA340T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance JunctiontoLead (Note 1)
Thermal Resistance JunctiontoAmbient (Note 1)
R
θ
JL
R
θ
JA
15
81
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
V
F
T
J
= 25
°
C
T
J
= 100
°
C
Volts
(I
F
= 3.0 A)
0.450
0.390
Maximum Instantaneous Reverse Current
I
R
T
J
= 25
°
C
T
J
= 100
°
C
mA
(V
R
= 40 V)
0.3
15
1. Mounted on 2
″
Square PC Board with 1
″
Square Total Pad Size, PC Board FR4.
2. Pulse Test: Pulse Width
≤
250
μ
s, Duty Cycle
≤
2.0%.
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
10
1
0.1
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.10
0.30
0.50
T
J
= 125
°
C
T
J
= 55
°
C
T
J
= 25
°
C
I
F
,
C
V
R
, REVERSE VOLTAGE (VOLTS)
100E3
10E3
10E6
100E6
30
40
20
10
0
I
R
,
100E9
100E12
T
J
= 125
°
C
0.20
0.40
0.60
T
J
= 100
°
C
10
1
0.1
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
0.10
0.30
0.50
T
J
= 125
°
C
T
J
= 55
°
C
T
J
= 25
°
C
I
F
,
C
0.20
0.40
T
J
= 100
°
C
0.60
1E3
1E6
10E9
1E9
T
J
= 55
°
C
T
J
= 25
°
C
T
J
= 100
°
C
V
R
, REVERSE VOLTAGE (VOLTS)
100E3
I
R
,
10E3
10E6
100E6
30
40
20
10
0
T
J
= 125
°
C
1E3
1E6
T
J
= 55
°
C
T
J
= 25
°
C
T
J
= 100
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
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| MBRAF1540T3G | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
| MBRAF260T3G | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
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